Modeling the near-gap refractive index properties of semiconductor multiple quantum wells and superlattices

1996 ◽  
Vol 2 (2) ◽  
pp. 197-209 ◽  
Author(s):  
D.A. Trivedi ◽  
N.G. Anderson
1988 ◽  
Vol 144 ◽  
Author(s):  
C. Shieh ◽  
C. Colvard ◽  
J. Mantz ◽  
K. Alavi ◽  
R. Engelmann

ABSTRACTThe effect of Ar sputtering, in combination with different dielectric cappings, on the disordering of AlGaAs/GaAs multiple quantum wells was studied. It was found that the combination of Ar sputter etch and SiO2 capping provided the strongest enhancement in disordering. This effect generates enough change in refractive index to produce an index guided laser.


1990 ◽  
Vol 39 (6) ◽  
pp. 135
Author(s):  
XIE YUAN-LIN ◽  
CHEN ZHENG-HAO ◽  
ZHOU YUE-LIANG ◽  
YANG GUO-ZHEN ◽  
GU SHI-JIE

1991 ◽  
Vol 23 (7) ◽  
pp. S883-S893 ◽  
Author(s):  
G. K. Hubler ◽  
C. N. Waddell ◽  
E. P. Donovan ◽  
J. M. Zavada

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-511-C5-515 ◽  
Author(s):  
J. L. OUDAR ◽  
J. DUBARD ◽  
F. ALEXANDRE ◽  
D. HULIN ◽  
A. MIGUS ◽  
...  

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-239-C5-242 ◽  
Author(s):  
E. GLASER ◽  
B. V. SHANABROOK ◽  
R. J. WAGNER ◽  
R. L. HAWKINS ◽  
W. J. MOORE ◽  
...  

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