scholarly journals Electroabsorption and refractive index modulation induced by intersubband transitions in GaN/AlN multiple quantum wells

2012 ◽  
Vol 20 (11) ◽  
pp. 12541 ◽  
Author(s):  
A. Lupu ◽  
M. Tchernycheva ◽  
Y. Kotsar ◽  
E. Monroy ◽  
F. H. Julien
Keyword(s):  
Refractive Index ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Refractive Index Modulation ◽  
Intersubband Transitions ◽  
Index Modulation

Intrasubband and intersubband transitions in GaAs∕AlxGa1−xAs multiple quantum wells

2007 ◽  
Vol 90 (16) ◽  
pp. 162111
Author(s):  
J. M. Li ◽  
K. Y. Qian ◽  
Q. S. Zhu ◽  
Z. G. Wang
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Intersubband Transitions

The Effect of Ar Sputtering on the Disordering of AlGaAs/GaAs Multiple Quantum Wells

1988 ◽  
Vol 144 ◽  
Author(s):  
C. Shieh ◽  
C. Colvard ◽  
J. Mantz ◽  
K. Alavi ◽  
R. Engelmann
Keyword(s):  
Refractive Index ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

ABSTRACTThe effect of Ar sputtering, in combination with different dielectric cappings, on the disordering of AlGaAs/GaAs multiple quantum wells was studied. It was found that the combination of Ar sputter etch and SiO2 capping provided the strongest enhancement in disordering. This effect generates enough change in refractive index to produce an index guided laser.

Intersubband transitions in ZnO multiple quantum wells

2008 ◽  
Vol 92 (19) ◽  
pp. 191906 ◽  
Author(s):  
M. Belmoubarik ◽  
K. Ohtani ◽  
H. Ohno
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Intersubband Transitions
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