scholarly journals A METHOD FOR OBTAINING THE DISPERSION RELATION OF THE REFRACTIVE INDEX NEAR THE BAND-GAP OF GaAs/GaAlAs MULTIPLE QUANTUM WELLS MATERIALS

1990 ◽  
Vol 39 (6) ◽  
pp. 135
Author(s):  
XIE YUAN-LIN ◽  
CHEN ZHENG-HAO ◽  
ZHOU YUE-LIANG ◽  
YANG GUO-ZHEN ◽  
GU SHI-JIE
1988 ◽  
Vol 38 (18) ◽  
pp. 13443-13446 ◽  
Author(s):  
J. A. Levenson ◽  
I. Abram ◽  
R. Raj ◽  
G. Dolique ◽  
J. L. Oudar ◽  
...  

1988 ◽  
Vol 144 ◽  
Author(s):  
C. Shieh ◽  
C. Colvard ◽  
J. Mantz ◽  
K. Alavi ◽  
R. Engelmann

ABSTRACTThe effect of Ar sputtering, in combination with different dielectric cappings, on the disordering of AlGaAs/GaAs multiple quantum wells was studied. It was found that the combination of Ar sputter etch and SiO2 capping provided the strongest enhancement in disordering. This effect generates enough change in refractive index to produce an index guided laser.


1990 ◽  
Vol 229 (1-3) ◽  
pp. 398-401 ◽  
Author(s):  
U. Bockelmann ◽  
P. Hiergeist ◽  
G. Abstreiter ◽  
G. Weimann ◽  
W. Schlapp

2006 ◽  
Vol 498 (1-2) ◽  
pp. 179-182 ◽  
Author(s):  
J. Zhao ◽  
J. Chen ◽  
Z.C. Feng ◽  
J.L. Chen ◽  
R. Liu ◽  
...  

2004 ◽  
Vol 43 (6A) ◽  
pp. 3491-3492
Author(s):  
Chikara Onodera ◽  
Tadayoshi Shoji ◽  
Yukio Hiratate ◽  
Tsunemasa Taguchi

1997 ◽  
Author(s):  
Hugues Lafontaine ◽  
Nelson L. Rowell ◽  
Geof C. Aers ◽  
Derek C. Houghton ◽  
Daniel Labrie ◽  
...  

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