A comprehensive optical characterization method for high-performance n-p-n AlGaAs-GaAs heterojunction bipolar transistors

1995 ◽  
Vol 1 (4) ◽  
pp. 1030-1036 ◽  
Author(s):  
Z.H. Lu ◽  
A. Majerfeld ◽  
P.D. Wright ◽  
L.W. Yang
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Performance ◽  
Optical Characterization ◽  
Bipolar Transistors

Extrinsic base optimization for high-performance RF SiGe heterojunction bipolar transistors

1997 ◽  
Vol 18 (9) ◽  
pp. 426-428 ◽  
Author(s):  
R. Tang ◽  
J. Ford ◽  
B. Pryor ◽  
S. Anandakugan ◽  
P. Welch ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Performance ◽  
Bipolar Transistors ◽  
Extrinsic Base

III-V HETEROJUNCTION BIPOLAR TRANSISTORS FOR HIGH-SPEED APPLICATIONS

1990 ◽  
Vol 01 (03n04) ◽  
pp. 245-301 ◽  
Author(s):  
M.F. CHANG ◽  
P.M. ASBECK
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
High Performance ◽  
Growth Parameters ◽  
Bipolar Transistors ◽  
System Requirements ◽  
Potential Impact ◽  
Computational Systems ◽  
Very High

Recent advances in communication, radar and computational systems demand very high performance electronic circuits. Heterojunction bipolar transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages than competing technologies. This paper reviews the present status of GaAs and InP-based HBT technologies and their applications to digital, analog, microwave and multifunction circuits. It begins with a brief review of HBT device concepts and critical epitaxial growth parameters. Issues important for device modeling and fabrication technologies are discussed. The paper then highlights the performance and the potential impact of HBT devices and integrated circuits in various application areas. Key prospects for future HBT development are also addressed.

Incorporation and Diffusion of P-Type Dopants for Metal Organic Vapor Phase Epitaxy

1988 ◽  
Vol 144 ◽  
Author(s):  
M. A. Tischler ◽  
T. F. Kuech
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Performance ◽  
Electrical Characterization ◽  
Bipolar Transistors ◽  
Organic Vapor ◽  
Dopant Profile ◽  
Metal Organic ◽  
Initial Placement ◽  
P Type ◽  
And Diffusion

ABSTRACTThe control of p-type dopants is very important in producing high performance minority carrier devices such as heterojunction bipolar transistors (HBT) and lasers. In this study, an electrical characterization technique is described which is very sensitive to the p-type dopant profile in a heterojunction. Both the placement of the dopant, i.e. the as-grown profile, and thermal diffusion effects have been investigated. The factors which control the initial placement and subsequent diffusion of the dopant species have been determined and used to produce device-quality GaAs/Al0.30Ga0.70As p+/n heterojunctions.

Static Performance of SiGe HBTs at Low Temperature

2014 ◽  
Vol 666 ◽  
pp. 59-63
Author(s):  
Maya Lakhdara ◽  
Saϊda Latreche ◽  
Christian Gontrand
Keyword(s):  
Low Temperature ◽  
Heterojunction Bipolar Transistors ◽  
High Performance ◽  
Industrial Process ◽  
Bipolar Transistors ◽  
Fundamental Aspect ◽  
Cryogenic Temperatures ◽  
Sige Hbt ◽  
Static Performance ◽  
The Impact

—This paper analyse is the impact of cryogenic temperatures for SiGe Heterojunction Bipolar Transistors (HBTs) base, realised in BiCMOS9 0.13μm industrial process. The use of these components in microwaves applications exposed to various temperatures is fundamental aspect to predict in precise way its electric characteristics. This paper investigates the temperature dependence from (170 K to 300 K) of DC, for NPN SiGe heterojunction bipolar transistors (HBTs) and notably modeling high performance Si/SiGe HBT for telecommunication and radar detection (>0.5THz) in low temperature (cryogenic temperature).

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