Three-dimensional electromagnetic PIC model of a compact ECR plasma source

1995 ◽  
Vol 23 (4) ◽  
pp. 602-608 ◽  
Author(s):  
V.P. Gopinath ◽  
T.A. Grotjohn
Keyword(s):  
Three Dimensional ◽  
Plasma Source ◽  
Ecr Plasma

Morphology and Interface chemistry of the Initial Growth of GAN and ALN on α-SIC and Sapphire

1991 ◽  
Vol 237 ◽  
Author(s):  
Z. Sitar ◽  
L. S. Smith ◽  
M. J. Paisley ◽  
R. F. Davis
Keyword(s):  
Molecular Nitrogen ◽  
Three Dimensional ◽  
Plasma Source ◽  
Layer By Layer ◽  
Initial Growth ◽  
Interface Chemistry ◽  
Ecr Plasma ◽  
Gas Source ◽  
Nitride Formation ◽  
Gas Source Mbe

ABSTRACTThe morphology and interface chemistry occurring during the initial stages of growth of GaN and A1N layers has been obtained. Films were grown using gas source MBE equipment containing an ECR plasma source to activate molecular nitrogen. The experiments consisted of sequential depositions of about one monolayer thick films and XPS analysis. Evidence for silicon nitride formation on the SiC surface was obtained from the studies of both the Si oxidation states and the substrate peak intensity dependence on film thickness. The growth of GaN on sapphire appeared to occur via the Stranski-Krastanov mode, while the growth on SiC showed characteristics of three-dimensional growth. AlN grew in a layer-by-layer mode on both substrates.

Study on the influence of the magnetic field geometry on the power deposition in a helicon plasma source

2019 ◽  
Vol 85 (4) ◽  
Author(s):  
M. Magarotto ◽  
D. Melazzi ◽  
D. Pavarin
Keyword(s):  
Magnetic Field ◽  
Power Spectrum ◽  
Three Dimensional ◽  
Plasma Source ◽  
Magnetostatic Field ◽  
Helicon Plasma ◽  
Power Deposition ◽  
Full Wave ◽  
Field Geometry ◽  
Helicon Source

We have numerically studied how an actual confinement magnetostatic field affects power deposition in a helicon source. We have solved the wave propagation by means of two electromagnetic solvers, namely: (i) plaSma Padova Inhomogeneous Radial Electromagnetic solver (SPIREs), a mono-dimensional finite-difference frequency-domain code, and (ii) Advanced coDe for Anisotropic Media and ANTennas (ADAMANT), a full-wave three-dimensional tool based on the method of moments. We have computed the deposited power spectrum with SPIREs, power deposition profile with ADAMANT and the antenna impedance with both codes. First we have verified the numerical accuracy of both SPIREs and ADAMNT. Then, we have analysed two configurations of magnetostatic field, namely produced by Maxwell coils, and Helmholtz coils. For each configuration we have studied three cases: (i) low density $n=10^{17}~\text{m}^{-3}$ and low magnetic field $B_{0}=250$  G; (ii) medium density $n=10^{18}~\text{m}^{-3}$ and medium magnetic field $B_{0}=500$  G; (iii) high density $n=10^{19}~\text{m}^{-3}$ and high magnetic field $B_{0}=1000$  G. We have found that the Maxwell coil configuration does not produces significant changes in the deposited power phenomenon with respect to a perfectly uniform and axial magnetostatic field. While the Helmholtz coil configuration can lead to a power spectrum peaked near the axis of the discharge.

Thrust evaluation of compact ECR plasma source using 2-zone global model and plasma measurements

2020 ◽  
Vol 29 (8) ◽  
pp. 085007
Author(s):  
Anshu Verma ◽  
A Ganguli ◽  
D Sahu ◽  
Ramesh Narayanan ◽  
R D Tarey
Keyword(s):  
Plasma Source ◽  
Global Model ◽  
Ecr Plasma ◽  
Plasma Measurements

Characterization of CNx films prepared by twinned ECR plasma source enhanced DC magnetron sputtering

2001 ◽  
Vol 390 (1-2) ◽  
pp. 107-112 ◽  
Author(s):  
Jun Xu ◽  
Xinlu Deng ◽  
Jialiang Zhang ◽  
Wenqi Lu ◽  
Tengcai Ma
Keyword(s):  
Magnetron Sputtering ◽  
Plasma Source ◽  
Dc Magnetron Sputtering ◽  
Ecr Plasma ◽  
Cnx Films

Low Hydrogen Content Silicon Nitride Films Deposited at Room Temperature with an ECR Plasma Source

2004 ◽  
Vol 151 (10) ◽  
pp. C649 ◽  
Author(s):  
Gratiela I. Isai ◽  
Jisk Holleman ◽  
Hans Wallinga ◽  
Pierre H. Woerlee
Keyword(s):  
Silicon Nitride ◽  
Hydrogen Content ◽  
Room Temperature ◽  
Plasma Source ◽  
Ecr Plasma ◽  
Silicon Nitride Films

Lattice-Matched InAsN(X=0.38) on GaAs Grown by Molecular Beam Epitaxy

1996 ◽  
Vol 423 ◽  
Author(s):  
Y. C. Kao ◽  
T. P. E. Broekaert ◽  
H. Y. Liu ◽  
S. Tang ◽  
I. H. Ho ◽  
...  
Keyword(s):  
Layer Structure ◽  
Plasma Source ◽  
Solubility Limit ◽  
Epitaxial Films ◽  
Group V ◽  
Mbe Growth ◽  
Growth Technique ◽  
Ecr Plasma ◽  
Nitrogen Incorporation ◽  
Lattice Matched

AbstractIn this paper, we report the MBE growth of high nitrogen content lattice-matched InAs1−xNx (x=0.38) single crystal epitaxial films on GaAs. The nitrogen incorporation is about an order higher than previously reported on other mixed group V nitride alloys. These data are consistent with a nitrogen solubility limit calculation in various III-V binary alloys, which predicts orders of magnitude higher nitrogen incorporation in InAs than any other alloys. InAsN growths were obtained using a modified ECR-MBE system with atomic-nitrogen generated by an ECR plasma source. Improved crystal quality was obtained using a “template” growth technique. An x-ray linewidth of 270 arc-s was achieved on a 0.4 μm thick InAs0.62N0.38/GaAs multi-layer structure. Hall effect data show these InAsN films are semi-metallic.

Characterization of atomic oxygen from an ECR plasma source

2002 ◽  
Vol 11 (4) ◽  
pp. 361-367 ◽  
Author(s):  
M Naddaf ◽  
V N Bhoraskar ◽  
A B Mandale ◽  
S R Sainkar ◽  
S V Bhoraskar
Keyword(s):  
Atomic Oxygen ◽  
Plasma Source ◽  
Ecr Plasma
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