Low field leakage current and soft breakdown in ultra-thin gate oxides after heavy ions, electron or X-ray irradiation

2000 ◽  
Vol 47 (3) ◽  
pp. 566-573 ◽  
Author(s):  
M. Ceschia ◽  
A. Paccagnella ◽  
S. Sandrin ◽  
G. Ghidini ◽  
J. Wyss ◽  
...  
Keyword(s):  
Leakage Current ◽  
Heavy Ions ◽  
Gate Oxides ◽  
X Ray ◽  
Low Field ◽  
Soft Breakdown

Breakdown Characteristics of Ultra-Thin Gate Oxides Caused by Plasma Charging

1999 ◽  
Vol 567 ◽  
Author(s):  
Chi-Chun Chen ◽  
Horng-Chih Lin ◽  
Chun-Yen Chang ◽  
Chao-Hsin Chien ◽  
Tiao-Yuan Huang
Keyword(s):  
Leakage Current ◽  
Tunneling Current ◽  
Oxide Thickness ◽  
Gate Leakage Current ◽  
Gate Oxides ◽  
Gate Current ◽  
Oxide Degradation ◽  
Soft Breakdown ◽  
Ultrathin Oxide ◽  
Breakdown Event

ABSTRACTBreakdown characteristics of ultra-thin gate oxides caused by plasma charging were studied in this work. It is observed that as oxide thickness is scaled down to 4 nm, some traditional monitor parameters may lose their sensitivity for detecting oxide degradation induced by plasma charging damage, due to insignificant trap generation. Even the gate leakage current, although sensitive for 4 nm oxide, may no longer be sensitive enough for even thinner oxide (e.g., 2.6 nm), due to the existence of large tunneling current. Moreover, several soft-breakdown events were found to occur in ultrathin oxide before the final onset of a catastrophic hard-breakdown. Finally, an equivalent local oxide thickness is calculated using local oxide thinning model to estimate the stepwise increase of gate current after soft-breakdown event.

Degradation and SILC Effects of RPECVD sub-2.0nm Oxide/Nitride and Oxynitride Dielectrics Under Constant Current Stress

2002 ◽  
Vol 716 ◽  
Author(s):  
Yi-Mu Lee ◽  
Yider Wu ◽  
Joon Goo Hong ◽  
Gerald Lucovsky
Keyword(s):  
Leakage Current ◽  
Electrical Performance ◽  
Constant Current ◽  
Continuous Increase ◽  
Current Stress ◽  
Thermal Oxide ◽  
Stress Induced Leakage Current ◽  
Boron Penetration ◽  
Soft Breakdown ◽  
Induced Defects

AbstractConstant current stress (CCS) has been used to investigate the Stress-Induced Leakage Current (SILC) to clarify the influence of boron penetration and nitrogen incorporation on the breakdown of p-channel devices with sub-2.0 nm Oxide/Nitride (O/N) and oxynitride dielectrics prepared by remote plasma enhanced CVD (RPECVD). Degradation of MOSFET characteristics correlated with soft breakdown (SBD) and hard breakdown (HBD), and attributed to the increased gate leakage current are studied. Gate voltages were gradually decreased during SBD, and a continuous increase in SILC at low gate voltages between each stress interval, is shown to be due to the generation of positive traps which are enhanced by boron penetration. Compared to thermal oxides, stacked O/N and oxynitride dielectrics with interface nitridation show reduced SILC due to the suppression of boron penetration and associated positive trap generation. Devices stressed under substrate injection show harder breakdown and more severe degradation, implying a greater amount of the stress-induced defects at SiO2/substrate interface. Stacked O/N and oxynitride devices also show less degradation in electrical performance compared to thermal oxide devices due to an improved Si/SiO2 interface, and reduced gate-to-drain overlap region.

Logistic model for leakage current in electrical stressed ultra-thin gate oxides

2003 ◽  
Vol 39 (9) ◽  
pp. 749 ◽  
Author(s):  
E. Miranda ◽  
A. Cester ◽  
A. Paccagnella
Keyword(s):  
Leakage Current ◽  
Logistic Model ◽  
Gate Oxides

A New Fabrication Process of Superconducting Nb Tunnel Junctions with Ultralow Leakage Current for X-Ray Detection

1993 ◽  
Vol 32 (Part 1, No. 10) ◽  
pp. 4535-4537 ◽  
Author(s):  
Hiroshi Nakagawa ◽  
Gianpiero Pepe ◽  
Hiroshi Akoh ◽  
Luigi Frunzio ◽  
Roberto Cristiano ◽  
...  
Keyword(s):  
Leakage Current ◽  
Tunnel Junctions ◽  
Fabrication Process ◽  
X Ray
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