The effect of emitter junction bias on the low dose-rate radiation response of bipolar devices

1997 ◽  
Vol 44 (6) ◽  
pp. 1840-1848 ◽  
Author(s):  
V.S. Pershenkov ◽  
V.B. Maslov ◽  
S.V. Cherepko ◽  
I.N. Shvetzov-Shilovsky ◽  
V.V. Belyakov ◽  
...  
Keyword(s):  
Dose Rate ◽  
Low Dose ◽  
Radiation Response ◽  
Low Dose Rate ◽  
Bipolar Devices ◽  
Emitter Junction

Annealing behavior of linear bipolar devices with enhanced low-dose-rate sensitivity

2004 ◽  
Vol 51 (6) ◽  
pp. 3172-3177 ◽  
Author(s):  
M.R. Shaneyfelt ◽  
J.R. Schwank ◽  
D.M. Fleetwood ◽  
R.L. Pease ◽  
J.A. Felix ◽  
...  
Keyword(s):  
Dose Rate ◽  
Low Dose ◽  
Rate Sensitivity ◽  
Annealing Behavior ◽  
Low Dose Rate ◽  
Bipolar Devices

Effect of switching from high to low dose rate on linear bipolar technology radiation response

2004 ◽  
Vol 51 (5) ◽  
pp. 2896-2902 ◽  
Author(s):  
J. Boch ◽  
F. Saigne ◽  
R.D. Schrimpf ◽  
D.M. Fleetwood ◽  
S. Ducret ◽  
...  
Keyword(s):  
Dose Rate ◽  
Low Dose ◽  
Radiation Response ◽  
Low Dose Rate ◽  
Bipolar Technology

Reduced Low Dose Rate Sensitivity (RLDRS) in Bipolar Devices

2019 ◽  
Author(s):  
V. Pershenkov ◽  
A. Bakerenkov ◽  
A. Rodin ◽  
V. Felitsyn ◽  
V. Telets ◽  
...  
Keyword(s):  
Dose Rate ◽  
Low Dose ◽  
Rate Sensitivity ◽  
Low Dose Rate ◽  
Bipolar Devices

Nature of Interface Defect Buildup in Gated Bipolar Devices Under Low Dose Rate Irradiation

2006 ◽  
Vol 53 (6) ◽  
pp. 3649-3654 ◽  
Author(s):  
X. J. Chen ◽  
H. J. Barnaby ◽  
R. D. Schrimpf ◽  
D. M. Fleetwood ◽  
R. L. Pease ◽  
...  
Keyword(s):  
Dose Rate ◽  
Low Dose ◽  
Low Dose Rate ◽  
Bipolar Devices ◽  
Interface Defect

Elimination of Enhanced Low-Dose-Rate Sensitivity in Linear Bipolar Devices Using Silicon-Carbide Passivation

2006 ◽  
Vol 53 (4) ◽  
pp. 2027-2032 ◽  
Author(s):  
M.R. Shaneyfelt ◽  
M.C. Maher ◽  
R.C. Camilletti ◽  
J.R. Schwank ◽  
R.L. Pease ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Dose Rate ◽  
Low Dose ◽  
Rate Sensitivity ◽  
Low Dose Rate ◽  
Bipolar Devices

Extracting the fitting parameters for the conversion model of enhanced low dose rate sensitivity in bipolar devices

2013 ◽  
Vol 42 (1) ◽  
pp. 48-52 ◽  
Author(s):  
A. S. Bakerenkov ◽  
V. V. Belyakov ◽  
V. S. Pershenkov ◽  
A. A. Romanenko ◽  
D. V. Savchenkov ◽  
...  
Keyword(s):  
Dose Rate ◽  
Low Dose ◽  
Rate Sensitivity ◽  
Conversion Model ◽  
Low Dose Rate ◽  
Bipolar Devices ◽  
Fitting Parameters

scholarly journals Enhanced low dose rate sensitivity (ELDRS) and reduced low dose rate sensitivity (RLDRS) in bipolar devices

2020 ◽  
Vol 33 (2) ◽  
pp. 303-316
Author(s):  
Vyacheslav Pershenkov ◽  
Alexander Bakerenkov ◽  
Alexander Rodin ◽  
Vladislav Felitsyn ◽  
Alexander Zhukov ◽  
...  
Keyword(s):  
Dose Rate ◽  
Low Dose ◽  
Rate Sensitivity ◽  
Interface Traps ◽  
Oxide Charge ◽  
Conversion Model ◽  
Low Dose Rate ◽  
Bipolar Devices ◽  
Radiation Induced ◽  
Dose Rate Effect

Possible physical mechanism of enhanced low dose rate sensitivity (ELDRS) and reduced low dose rate sensitivity (RLDRS) in bipolar devices is described. Modification of the low dose rate conversion model is presented. The enhanced or reduced sensitivity can be connected with a specific position of the effective Fermi level relatively acceptor and donor radiation-induced interface traps. The qualitative and quantitative analysis of the low dose rate effects is presented. The effect of the oxide trapped charge on the value of the oxide electric field and the yield of the oxide charge were taken into account. It leads to dependence of the accumulation of radiation induced oxide charge and interface traps on the dose rate. In enhancement version the ELDRS and RLDRS conversion model describes the low dose rate effect in as ?true? dose rate effect.

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