scholarly journals Arsenic-Doped High-Resistivity-Silicon Epitaxial Layers for Integrating Low-Capacitance Diodes

Materials ◽  
2011 ◽  
Vol 4 (12) ◽  
pp. 2092-2107 ◽  
Author(s):  
Agata Sakic ◽  
Tom L. M. Scholtes ◽  
Wiebe de Boer ◽  
Negin Golshani ◽  
Jaber Derakhshandeh ◽  
...  
Keyword(s):  
High Resistivity ◽  
Epitaxial Layers ◽  
High Resistivity Silicon ◽  
Low Capacitance

A Low Noise Silicon Detector Preamplifier System for Room Temperature X-Ray Spectroscopy

1993 ◽  
Vol 302 ◽  
Author(s):  
G. Bertuccio ◽  
A. Pullia
Keyword(s):  
High Resolution ◽  
Room Temperature ◽  
Silicon Detector ◽  
Low Noise ◽  
High Resistivity ◽  
Charge Amplifier ◽  
X Ray ◽  
High Resistivity Silicon ◽  
Ultra Low Noise ◽  
Low Capacitance

ABSTRACTThe design and performances of a system for high resolution X-ray spectroscopy are presented. The detector is a low capacitance diode built on high resistivity silicon. The signal preamplification is made by means of an ultra-low noise charge amplifier of new conception. Presently the system exhibits an equivalent noise charge of 61 r.m.s. electrons at 297 K and 32 r.m.s. electrons at 223 K. It is shown how an improvement down to 30 r.m.s. electrons at room temperature is expected employing an integrated transistor on the detector chip.

JFET FOR COMPLETELY DEPLETED HIGH RESISTIVITY SILICON

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-363-C4-366 ◽  
Author(s):  
V. RADEKA ◽  
P. REHAK ◽  
S. RESCIA ◽  
E. GATTI ◽  
A. LONGONI ◽  
...  
Keyword(s):  
High Resistivity ◽  
High Resistivity Silicon

Beamforming Lens Antenna on a High Resistivity Silicon Wafer for 60 GHz WPAN

2010 ◽  
Vol 58 (3) ◽  
pp. 706-713 ◽  
Author(s):  
Woosung Lee ◽  
Jaeheung Kim ◽  
Choon Sik Cho ◽  
Young Joong Yoon
Keyword(s):  
Silicon Wafer ◽  
High Resistivity ◽  
60 Ghz ◽  
Lens Antenna ◽  
High Resistivity Silicon

Current assisted photonic mixing devices fabricated on high resistivity silicon

2008 ◽  
Author(s):  
L. Pancheri ◽  
D. Stoppa ◽  
N. Massari ◽  
M. Malfatti ◽  
C. Piemonte ◽  
...  
Keyword(s):  
High Resistivity ◽  
High Resistivity Silicon

Heterostructures of GaAs and AlAs on Silicon: X-Ray Analysis and Excimer Laser Annealing

1988 ◽  
Vol 116 ◽  
Author(s):  
A. Georgakilas ◽  
M. Fatemi ◽  
L. Fotiadis ◽  
A. Christou
Keyword(s):  
Molecular Beam Epitaxy ◽  
Dislocation Density ◽  
Excimer Laser ◽  
Molecular Beam ◽  
Laser Annealing ◽  
High Resistivity ◽  
Silicon Substrates ◽  
Excimer Laser Annealing ◽  
X Ray ◽  
High Resistivity Silicon

AbstractOne micron thick AlAs/GaAs structures have been deposited by molecular beam epitaxy onto high resistivity silicon substrates. Subsequent to deposition, it is shown that Excimer laser annealing up to 120mJ/cm2 at 248nm improves the GaAs mobility to approximately 2000cm2 /v-s. Dislocation density, however, did not decrease up to 180mJ/cm2 showing that improvement in transport properties may not be accompanied by an associated decrease in dislocation density at the GaAs/Si interface.

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