Extraction of a nonlinear AC FET model using small-signal S-parameters

2002 ◽  
Vol 50 (5) ◽  
pp. 1311-1315 ◽  
Author(s):  
J.H.K. Vuolevi ◽  
T. Rahkonen
Keyword(s):  
Small Signal ◽  
S Parameters

scholarly journals TCAD Simulations and Small Signal Modeling of DMG AlGaN/GaN HFET

2017 ◽  
Vol 7 (4) ◽  
pp. 1839
Author(s):  
Rahis Kumar Yadav ◽  
Pankaj Pathak ◽  
R M Mehra
Keyword(s):  
Superior Performance ◽  
Current Gain ◽  
Model Parameters ◽  
Small Signal ◽  
Power Gain ◽  
Signal Model ◽  
Small Signal Model ◽  
S Parameters ◽  
Gan Hfet ◽  
Dual Material

This article presents extraction of small signal model parameters and TCAD simulation of novel asymmetric field plated dual material gate AlGaN/GaN HFET first time. Small signal model is essential for design of LNA and microwave electronic circuit by using the proposed superior performance HFET structure. Superior performances of device are due to its dual material gate structure and field plate that can provide better electric field uniformity, suppression of short channel effects and improvement in carrier transport efficiency. In this article we used direct parameter extraction methodology in which S-parameters of device were measured using pinchoff cold FET biasing. The measured S-parameters are then transformed into Y-parameters to extract capacitive elements and then in to Z-parameters to extract series parasitic elements. Intrinsic parameters are extracted from Y-parameters after de-embedding all parasitic elements of devce. Microwave figure of merits and dc performance are also studied for proposed HFET. The important figure of merits of device reported in the paper include transconductance, drain conductance, current gain, transducer power gain, available power gain, maximum stable gain, maximum frequency of oscillation, cut-off frequency, stability factor and time delay. Reported results are validated with experimental and simulation results for consistency and accuracy.

scholarly journals Accurate LDMOS Model Extraction Using DC, CV and Small Signal S Parameters Measurements for Reliability Issues

10.5772/7015 ◽  
2009 ◽  
Author(s):  
Mouna Chetibi-Riah ◽  
Mohamed Masmoudi ◽  
Hichame Maanane ◽  
Jrme Marcon ◽  
Karine Mourgues ◽  
...  
Keyword(s):  
Small Signal ◽  
Model Extraction ◽  
S Parameters

An analytic method for parameter extraction of InP HBTs small-signal model

Circuit World ◽  
2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Jincan Zhang ◽  
Min Liu ◽  
Jinchan Wang ◽  
Kun Xu
Keyword(s):  
Equivalent Circuit ◽  
High Speed ◽  
Extraction Procedure ◽  
Parameter Extraction ◽  
Circuit Parameter ◽  
Small Signal ◽  
Current Crowding ◽  
Extraction Technology ◽  
Content Type ◽  
S Parameters

Purpose High-speed Indium Phosphide (InP) HBTs have been widely used to design high-speed analog, digital and mixed-signal integrated circuits. The purpose of this study is to propose a new parameter extraction procedure for determining an improved T-topology small-signal equivalent circuit of InP heterojunction bipolar transistors (HBTs). Design/methodology/approach The alternating current crowding effect is considered through adding the intrinsic base capacitance in the small-signal equivalent circuit. All of the circuit parameters are extracted directly without using any approximation. Findings The extraction technique is more easily understood and clearer than other extraction methods, as the equations are derived from the S-parameters by peeling peripheral elements from small-signal models to get reduced ones and extracting each equivalent-circuit parameter using each equation. Originality/value To validate the presented parameter extraction technology, an n-p-n emitter-up InP HBT was analyzed adopting the method. Excellent agreement between measured and modeled S-parameters is obtained up to 40 GHz.

Small-signal parameter extraction of asymmetric DCDMG AlGaN/GaN HEMT

2018 ◽  
Vol 37 (1) ◽  
pp. 386-400
Author(s):  
Rahis Kumar Yadav ◽  
Pankaj Pathak ◽  
R.M. Mehra
Keyword(s):  
Parameter Extraction ◽  
Circuit Model ◽  
Current Gain ◽  
Small Signal ◽  
Power Gain ◽  
Frequency Range ◽  
Signal Parameter ◽  
Content Type ◽  
Signal Parameters ◽  
S Parameters

Purpose This paper aims to report small-signal parameter extraction and simulation of enhanced dual-channel dual-material gate AlGaN/GaN high electron mobility transistor (HEMT) for the first time for the characterization of a device in microwave range of frequency. Design/methodology/approach For parameter extraction, a standard and well-known direct parameter extraction methodology is applied. Extrinsic elements of small-signal circuit model are extracted from measured S-parameters obtained using pinch-off cold field effect transistor (FET) biasing in the first step at a low frequency range and at a higher frequency range in the second step to ensure higher extraction accuracy. Intrinsic elements are extracted from intrinsic Y-parameters that are obtained after de-embedding all the extrinsic parasitic elements of the device. Figure of merits of radio frequency are also derived from the measured results and S-parameters of the proposed device. Findings Small signal parameters of the proposed device circuit model are extracted using the standard direct parameter extraction technique. Analysis of microwave figure of merits for device include maximum oscillation frequency, cut-off frequency, current gain, transducer power gain, available power gain, maximum stable gain, transconductance, drain conductance, stern stability factor and time delay. Practical implications The paper bridges the gaps between theory and experimental practices by validating extracted results with reported results of structurally matching devices. Originality/value An enhanced device structure investigated for small signal parameters incorporates field plate over dual metal engineered gate to provide better electric field uniformity, effective suppression of short channel effect, reduction in current collapse, improvement in carrier transport efficiency and enhancement in drain current capabilities.

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