GaAsFET and HEMT small-signal parameter extraction from measured S-parameters

1994 ◽  
Vol 43 (4) ◽  
pp. 655-658 ◽  
Author(s):  
L.T. Wurtz
Keyword(s):  
Parameter Extraction ◽  
Small Signal ◽  
Signal Parameter ◽  
S Parameters

Small-signal parameter extraction of asymmetric DCDMG AlGaN/GaN HEMT

2018 ◽  
Vol 37 (1) ◽  
pp. 386-400
Author(s):  
Rahis Kumar Yadav ◽  
Pankaj Pathak ◽  
R.M. Mehra
Keyword(s):  
Parameter Extraction ◽  
Circuit Model ◽  
Current Gain ◽  
Small Signal ◽  
Power Gain ◽  
Frequency Range ◽  
Signal Parameter ◽  
Content Type ◽  
Signal Parameters ◽  
S Parameters

Purpose This paper aims to report small-signal parameter extraction and simulation of enhanced dual-channel dual-material gate AlGaN/GaN high electron mobility transistor (HEMT) for the first time for the characterization of a device in microwave range of frequency. Design/methodology/approach For parameter extraction, a standard and well-known direct parameter extraction methodology is applied. Extrinsic elements of small-signal circuit model are extracted from measured S-parameters obtained using pinch-off cold field effect transistor (FET) biasing in the first step at a low frequency range and at a higher frequency range in the second step to ensure higher extraction accuracy. Intrinsic elements are extracted from intrinsic Y-parameters that are obtained after de-embedding all the extrinsic parasitic elements of the device. Figure of merits of radio frequency are also derived from the measured results and S-parameters of the proposed device. Findings Small signal parameters of the proposed device circuit model are extracted using the standard direct parameter extraction technique. Analysis of microwave figure of merits for device include maximum oscillation frequency, cut-off frequency, current gain, transducer power gain, available power gain, maximum stable gain, transconductance, drain conductance, stern stability factor and time delay. Practical implications The paper bridges the gaps between theory and experimental practices by validating extracted results with reported results of structurally matching devices. Originality/value An enhanced device structure investigated for small signal parameters incorporates field plate over dual metal engineered gate to provide better electric field uniformity, effective suppression of short channel effect, reduction in current collapse, improvement in carrier transport efficiency and enhancement in drain current capabilities.

scholarly journals DC Characterization and Fast Small-Signal Parameter Extraction of Organic Thin Film Transistors With Different Geometries

2020 ◽  
Vol 41 (10) ◽  
pp. 1512-1515
Author(s):  
August Arnal ◽  
Albert Crespo-Yepes ◽  
Eloi Ramon ◽  
Lluis Teres ◽  
Rosana Rodriguez ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Parameter Extraction ◽  
Organic Thin Film Transistors ◽  
Small Signal ◽  
Organic Thin Film ◽  
Signal Parameter ◽  
Dc Characterization

An accurate and simplified small signal parameter extraction method for GaN HEMT

2019 ◽  
Vol 47 (6) ◽  
pp. 941-953 ◽  
Author(s):  
Ahmad Khusro ◽  
Mohammad S. Hashmi ◽  
Abdul Quaiyum Ansari ◽  
Aditya Mishra ◽  
Mohammad Tarique
Keyword(s):  
Extraction Method ◽  
Parameter Extraction ◽  
Small Signal ◽  
Signal Parameter ◽  
Gan Hemt

An analytic method for parameter extraction of InP HBTs small-signal model

Circuit World ◽  
2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Jincan Zhang ◽  
Min Liu ◽  
Jinchan Wang ◽  
Kun Xu
Keyword(s):  
Equivalent Circuit ◽  
High Speed ◽  
Extraction Procedure ◽  
Parameter Extraction ◽  
Circuit Parameter ◽  
Small Signal ◽  
Current Crowding ◽  
Extraction Technology ◽  
Content Type ◽  
S Parameters

Purpose High-speed Indium Phosphide (InP) HBTs have been widely used to design high-speed analog, digital and mixed-signal integrated circuits. The purpose of this study is to propose a new parameter extraction procedure for determining an improved T-topology small-signal equivalent circuit of InP heterojunction bipolar transistors (HBTs). Design/methodology/approach The alternating current crowding effect is considered through adding the intrinsic base capacitance in the small-signal equivalent circuit. All of the circuit parameters are extracted directly without using any approximation. Findings The extraction technique is more easily understood and clearer than other extraction methods, as the equations are derived from the S-parameters by peeling peripheral elements from small-signal models to get reduced ones and extracting each equivalent-circuit parameter using each equation. Originality/value To validate the presented parameter extraction technology, an n-p-n emitter-up InP HBT was analyzed adopting the method. Excellent agreement between measured and modeled S-parameters is obtained up to 40 GHz.

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