Characterization of MIS structure coplanar transmission lines for investigation of signal propagation in integrated circuits

1990 ◽  
Vol 38 (7) ◽  
pp. 881-890 ◽  
Author(s):  
T. Shibata ◽  
E. Sano
Keyword(s):  
Integrated Circuits ◽  
Transmission Lines ◽  
Signal Propagation ◽  
Mis Structure ◽  
Coplanar Transmission Lines

A Novel Approach to the Measurement and Characterization of Losses due to Surface Roughness in High Speed Transmission Lines

2011 ◽  
Vol 2011 (CICMT) ◽  
pp. 000241-000245
Author(s):  
Femi Akinwale ◽  
A. Ege Engin
Keyword(s):  
Surface Roughness ◽  
Transmission Lines ◽  
High Speed ◽  
Data Transfer ◽  
Signal Propagation ◽  
High Frequencies ◽  
Novel Approach ◽  
Critical Issues ◽  
5 Ghz

An accurate measurement technique is required to fully characterize the losses observed at high frequencies in transmission lines. Evaluation of losses seen at high frequencies is necessary to meet the high-speed data transfer rates that future applications will demand. Conductor properties and losses are two critical issues in signal path characterization. The nature of conductor losses is not well understood at high speeds. Classical models used for predicting the effects of surface roughness on signal propagation are known to breakdown around 5 GHz. Novel methods are sought to quantify the effects beyond 5 GHz. In this paper, a simple methodology to extract conductor loss is derived and validated based on a stripline configuration of two different widths. The proposed methodology is applicable to surface roughness loss characterization of both organic and ceramic packaging materials.

Eye‐diagram and scattering parameter characterization of superconducting and gold coplanar transmission lines

1994 ◽  
Vol 65 (19) ◽  
pp. 2478-2480 ◽  
Author(s):  
J. Kruse ◽  
W. H. Chang ◽  
D. Scherrer ◽  
M. Feng ◽  
M. Scharen ◽  
...  
Keyword(s):  
Transmission Lines ◽  
Scattering Parameter ◽  
Eye Diagram ◽  
Coplanar Transmission Lines

Some applications of electron beam microanalysis techniques in VLSI process evaluation

1983 ◽  
Vol 41 ◽  
pp. 160-161
Author(s):  
Simon Thomas
Keyword(s):  
Integrated Circuits ◽  
Process Evaluation ◽  
Large Scale ◽  
Technology Development ◽  
Analytical Techniques ◽  
Successful Implementation ◽  
Analysis Of Failures ◽  
Characterization Of Materials ◽  
Circuits Vlsi

Trends in the technology development of very large scale integrated circuits (VLSI) have been in the direction of higher density of components with smaller dimensions. The scaling down of device dimensions has been not only laterally but also in depth. Such efforts in miniaturization bring with them new developments in materials and processing. Successful implementation of these efforts is, to a large extent, dependent on the proper understanding of the material properties, process technologies and reliability issues, through adequate analytical studies. The analytical instrumentation technology has, fortunately, kept pace with the basic requirements of devices with lateral dimensions in the micron/ submicron range and depths of the order of nonometers. Often, newer analytical techniques have emerged or the more conventional techniques have been adapted to meet the more stringent requirements. As such, a variety of analytical techniques are available today to aid an analyst in the efforts of VLSI process evaluation. Generally such analytical efforts are divided into the characterization of materials, evaluation of processing steps and the analysis of failures.

TEM characterization of WSix films

1994 ◽  
Vol 52 ◽  
pp. 848-849
Author(s):  
V. C. Kannan ◽  
S. M. Merchant ◽  
R. B. Irwin ◽  
A. K. Nanda ◽  
M. Sundahl ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Vapor Deposition ◽  
High Purity ◽  
Physical Vapor Deposition ◽  
Thermal Treatments ◽  
Rapid Thermal Anneal ◽  
Tungsten Silicide ◽  
Tem Characterization ◽  
Metal Silicides

Metal silicides such as WSi2, MoSi2, TiSi2, TaSi2 and CoSi2 have received wide attention in recent years for semiconductor applications in integrated circuits. In this study, we describe the microstructures of WSix films deposited on SiO2 (oxide) and polysilicon (poly) surfaces on Si wafers afterdeposition and rapid thermal anneal (RTA) at several temperatures. The stoichiometry of WSix films was confirmed by Rutherford Backscattering Spectroscopy (RBS). A correlation between the observed microstructure and measured sheet resistance of the films was also obtained.WSix films were deposited by physical vapor deposition (PVD) using magnetron sputteringin a Varian 3180. A high purity tungsten silicide target with a Si:W ratio of 2.85 was used. Films deposited on oxide or poly substrates gave rise to a Si:W ratio of 2.65 as observed by RBS. To simulatethe thermal treatments of subsequent processing procedures, wafers with tungsten silicide films were subjected to RTA (AG Associates Heatpulse 4108) in a N2 ambient for 60 seconds at temperatures ranging from 700° to 1000°C.

Detection and Characterization of an Electrical Failure Induced during Laser Ablation of Packages

2008 ◽  
Author(s):  
P. Schwindenhammer ◽  
H. Murray ◽  
P. Descamps ◽  
P. Poirier
Keyword(s):  
Laser Ablation ◽  
Integrated Circuits ◽  
Failure Analysis ◽  
Ablation Process ◽  
Thermally Induced ◽  
Electrical Failure ◽  
Electrical Phenomenon ◽  
Semiconductor Packages ◽  
Complex Semiconductor

Abstract Decapsulation of complex semiconductor packages for failure analysis is enhanced by laser ablation. If lasers are potentially dangerous for Integrated Circuits (IC) surface they also generate a thermal elevation of the package during the ablation process. During measurement of this temperature it was observed another and unexpected electrical phenomenon in the IC induced by laser. It is demonstrated that this new phenomenon is not thermally induced and occurs under certain ablation conditions.

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