Eye‐diagram and scattering parameter characterization of superconducting and gold coplanar transmission lines

1994 ◽  
Vol 65 (19) ◽  
pp. 2478-2480 ◽  
Author(s):  
J. Kruse ◽  
W. H. Chang ◽  
D. Scherrer ◽  
M. Feng ◽  
M. Scharen ◽  
...  
Keyword(s):  
Transmission Lines ◽  
Scattering Parameter ◽  
Eye Diagram ◽  
Coplanar Transmission Lines

Characterization of arcs in ICRF transmission lines

2009 ◽  
Vol 84 (2-6) ◽  
pp. 685-688 ◽  
Author(s):  
R. D’Inca ◽  
A. Onyshchenko ◽  
F. Braun ◽  
G. Siegl ◽  
V. Bobkov ◽  
...  
Keyword(s):  
Transmission Lines

High-power InAlAs/InGaAs Schottky barrier photodiodes for analog microwave signal transmission

2022 ◽  
Vol 43 (1) ◽  
pp. 012302
Author(s):  
K. S. Zhuravlev ◽  
A. L. Chizh ◽  
K. B. Mikitchuk ◽  
A. M. Gilinsky ◽  
I. B. Chistokhin ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Transmission Lines ◽  
High Power ◽  
High Speed ◽  
Signal Transmission ◽  
Mesa Structure ◽  
Microwave Characterization ◽  
Absorbing Layer ◽  
Analog Transmission

Abstract The design, manufacturing and DC and microwave characterization of high-power Schottky barrier InAlAs/InGaAs back-illuminated mesa structure photodiodes are presented. The photodiodes with 10 and 15 μm mesa diameters operate at ≥40 and 28 GHz, respectively, have the output RF power as high as 58 mW at a frequency of 20 GHz, the DC responsivity of up to 1.08 A/W depending on the absorbing layer thickness, and a photodiode dark current as low as 0.04 nA. We show that these photodiodes provide an advantage in the amplitude-to-phase conversion factor which makes them suitable for use in high-speed analog transmission lines with stringent requirements for phase noise.

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