Full-wave characterization of the mode conversion in a coplanar waveguide right-angled bend

1995 ◽  
Vol 43 (11) ◽  
pp. 2532-2538 ◽  
Author(s):  
Ming-Dong Wu ◽  
Sheng-Ming Deng ◽  
Ruey-Beei Wu ◽  
Powen Hsu
1990 ◽  
Vol 26 (19) ◽  
pp. 1615 ◽  
Author(s):  
G. Bartolucci ◽  
J. Piotrowski

1990 ◽  
Vol 26 (22) ◽  
pp. 1922
Author(s):  
G. Bartolocci ◽  
J. Piotrowski

Sensors ◽  
2021 ◽  
Vol 21 (4) ◽  
pp. 1259
Author(s):  
Dmitry Kozlov ◽  
Irina Munina ◽  
Pavel Turalchuk ◽  
Vitalii Kirillov ◽  
Alexey Shitvov ◽  
...  

A new implementation of a beam-steering transmitarray is proposed based on the tiled array architecture. Each pixel of the transmitarray is manufactured as a standalone unit which can be hard-wired for specific transmission characteristics. A set of complementary units, providing reciprocal phase-shifts, can be assembled in a prescribed spatial phase-modulation pattern to perform beam steering and beam forming in a broad spatial range. A compact circuit model of the tiled unit cell is proposed and characterized with full-wave electromagnetic simulations. Waveguide measurements of a prototype unit cell have been carried out. A design example of a tiled 10 × 10-element 1-bit beam-steering transmitarray is presented and its performance benchmarked against the conventional single-panel, i.e., unibody, counterpart. Prototypes of the tiled and single-panel C-band transmitarrays have been fabricated and tested, demonstrating their close performance, good agreement with simulations and a weak effect of fabrication tolerances. The proposed transmitarray antenna configuration has great potential for fifth-generation (5G) communication systems.


Author(s):  
Frédéric Drillet ◽  
Jérôme Loraine ◽  
Hassan Saleh ◽  
Imene Lahbib ◽  
Brice Grandchamp ◽  
...  

Abstract This paper presents the radio frequency (RF) measurements of an SPST switch realized in gallium nitride (GaN)/RF-SOI technology compared to its GaN/silicon (Si) equivalent. The samples are built with an innovative 3D heterogeneous integration technique. The RF switch transistors are GaN-based and the substrate is RF-SOI. The insertion loss obtained is below 0.4 dB up to 30 GHz while being 1 dB lower than its GaN/Si equivalent. This difference comes from the vertical capacitive coupling reduction of the transistor to the substrate. This reduction is estimated to 59% based on a RC network model fitted to S-parameters measurements. In large signal, the linearity study of the substrate through coplanar waveguide transmission line characterization shows the reduction of the average power level of H2 and H3 of 30 dB up to 38 dBm of input power. The large signal characterization of the SPST shows no compression up to 38 dBm and the H2 and H3 rejection levels at 38 dBm are respectively, 68 and 75 dBc.


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