The determination of the noise, gain and scattering parameters of microwave transistors (HEMT's) using only automatic noise figure test-set

1994 ◽  
Vol 42 (7) ◽  
pp. 1105-1113 ◽  
Author(s):  
G. Martines ◽  
M. Sannino
Keyword(s):  
Noise Figure ◽  
Scattering Parameters ◽  
Test Set ◽  
Microwave Transistors ◽  
Figure Test

Accurate determination of the noise figure of polarization-dependent optical amplifiers: theory and experiment

2006 ◽  
Vol 24 (3) ◽  
pp. 1499-1503 ◽  
Author(s):  
T. Briant ◽  
P. Grangier ◽  
R. Tualle-Brouri ◽  
A. Bellemain ◽  
R. Brenot ◽  
...  
Keyword(s):  
Noise Figure ◽  
Optical Amplifiers ◽  
Accurate Determination ◽  
Theory And Experiment

Determination of the systematic measuring error of scattering parameters of shf transistors as six-terminal networks

1982 ◽  
Vol 25 (2) ◽  
pp. 163-167
Author(s):  
A. I. Smirnov ◽  
A. A. Pavlyukovskii ◽  
V. I. Popov ◽  
N. I. Aleshkin ◽  
A. V. Gagarin
Keyword(s):  
Measuring Error ◽  
Scattering Parameters ◽  
Systematic Measuring

scholarly journals Metamodelling Techniques for the Optimal Design of Low-Noise Amplifiers

Electronics ◽  
2020 ◽  
Vol 9 (5) ◽  
pp. 787
Author(s):  
Amel Garbaya ◽  
Mouna Kotti ◽  
Mourad Fakhfakh ◽  
Esteban Tlelo-Cuautle
Keyword(s):  
Particle Swarm Optimization ◽  
Optimal Design ◽  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
Scattering Parameters ◽  
Perfect Agreement ◽  
Swarm Optimization ◽  
The Third ◽  
Intercept Point

In this article we deal with the optimal sizing of low-noise amplifiers (LNAs) using newly proposed metamodeling techniques. The main objective is to construct metamodels of main performances of the LNAs (namely, the third intercept point (IIP3), the scattering parameters (Sij), and the noise figure (NF)) and use them inside an optimization kernel for maximizing the circuits’ performances. The kriging surrogate modelling technique is used for constructing these models. The particle swarm optimization (PSO) technique is considered as the optimization metaheuristic. Two CMOS amplifiers are considered: a UMTS LNA and a multistandard LNA. Obtained results show that, at the considered working frequencies, the first LNA exhibits at 2.14 GHz a noise figure of 1.30 dB, an S21 of 16.01 dB, an S11 of −12.60 dB, and an IIP3 of 8.30 dBm. At 2 GHz, the second LNA has a noise figure of 1.24 dB, an S21 of 17.16 dB, an S11 of −13.74 dB, and an IIP3 of 4.30 dBm. Comparisons between results obtained using the constructed models and those of the simulation are presented to show the perfect agreement between them.

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