Deposition of paramagnetic Co/sub 4/Cr/sub 2/ seed layer for ferromagnetic Co/sub 5/Cr/sub 1/ recording layer in high density perpendicular media

1999 ◽  
Vol 35 (5) ◽  
pp. 2742-2744 ◽  
Author(s):  
A. Sato ◽  
M. Hatekeyama ◽  
S. Nakagawa ◽  
M. Naoe
Keyword(s):  
Seed Layer ◽  
High Density ◽  
Recording Layer ◽  
Perpendicular Media

The Influences of Ru Seed Layer Microstructure on Structural Properties of CoCrPt-SiO2 Perpendicular Media

2015 ◽  
Vol 1101 ◽  
pp. 108-114
Author(s):  
Jun Min Zhang ◽  
Yue Sheng ◽  
Chuan Ju Wang ◽  
Zhi Long Tan ◽  
Jun Bi ◽  
...  
Keyword(s):  
Grain Size ◽  
Magnetic Recording ◽  
Seed Layer ◽  
Magnetic Recording Media ◽  
Perpendicular Recording ◽  
Recording Layer ◽  
Perpendicular Media ◽  
High Density Magnetic Recording ◽  
Segregated Structure

CoCrPt-SiO2granular film is well known as a perpendicular magnetic recording (PMR) media. To control the segregated structure of the recording layer, the role of the Ru underlayer is important. CoCrPt-SiO2perpendicular recording films were prepared by magnetron sputtering, with a series of Ru films as seed layer. The microstructure of Ru seed layers and their influences on the grain size, roughness and surface morphology of CoCrPt-SiO2granular films were investigated. It was found that the microstructure of seed layer obviously effected the structure and grain isolation of recording layers. The grain size and roughness of CoCrPt-SiO2recording layer were both increased with increasing the thickness of Ru seed layer. It is concluded that the thin and rough Ru seed layer is suitable for high-density magnetic recording media, and Ru seed layer with suitable thickness is very helpful for the achievement of perfect isolation and excellent magnetic properties. The result revealed that it was relatively easy for the CoCrPt grains to get perfect isolation with Ru thickness of 70 nm.

Effect of a Ti seed layer on the magnetic properties of CoCrTa double-layered perpendicular media

2000 ◽  
Vol 87 (9) ◽  
pp. 6367-6369 ◽  
Author(s):  
T. Shimatsu ◽  
H. Komagome ◽  
I. Watanabe ◽  
H. Muraoka ◽  
Y. Sugita ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Seed Layer ◽  
Perpendicular Media

Advanced barrier and seed layer deposition enabling multiple type of TSVs integration

2019 ◽  
Vol 2019 (DPC) ◽  
pp. 000077-000103
Author(s):  
Thierry Mourier ◽  
Mathilde Gottardi ◽  
Pierre-Emile Philip ◽  
Sophie Verrun ◽  
Gilles Romero ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Seed Layer ◽  
Process Development ◽  
High Density ◽  
Process Equipment ◽  
Integration Schemes ◽  
Step Coverage ◽  
Wide Range ◽  
Silicon Thickness ◽  
Very High

TSV integration is a key technology allowing heterogeneous devices 3D integration. However, depending on the targeted application, various TSV sizes and integration schemes exist, all requesting very high aspect ratio. The most common integration is the Mid-process TSV for which aspect ratio is required to be higher than 10:1 whatever application. In the case of large interposers, silicon thickness has to be increased to limit the deformation of the substrate due to highly stressed devices. Same requirements are made by photonic interposers which use thick SOI substrate leading to high warpage during integration. In the opposite, imagers requires to save silicon surface thus reduce TSV size and keep out zone. Silicon thickness has to be kept in the 100 μm range leading then the aspect ratio of the TSV to increase. Recently, Hybrid bonding progresses allowed a new type of TSV to be introduced : High Density TSVs for imagers. In this application, micrometer range TSV have to be filled with a Silicon thickness reduction limited to 10 μm by grinding process control. In order to allow the metal filling of all those type of structures, we have developed a highly conformal barrier and seed layer processes using standard materials for easier integration. The process is based on the use of MOCVD TiN as a barrier. This material is deposited using TDMAT precursor which allows low temperature deposition (200 °C)[1] which extends also the polyvalence of the process toward polymer bonded integrations. The very high step coverage of this process, reported at more than 30% in 20:1 aspect ratio coupled to high resistance to copper diffusion allows as thin as 20 nm barrier thickness which appears relevant economically (for deposition and CMP) and for stress consideration, compared to the well known but thicker PVD TaN process. Considering seed layer, the eG3D process[2] was brought to a high maturity allowing it to be integrated in an applied material raider tool coupled to TSV filling reactors. This process, based on electrografting of copper has already proved a step coverage of more than 50% in 12:1 aspect ratio structures. The presented work shows that the same process requires only deposition parameters change to be able to fully cover 10×150 μm Mid-process TSV as well as 1×10 μm High density ones. The excellent step coverage of this process allowed as thin as 200 nm (for 10×120 μm TSVs) and 100 nm (for (1×10 μm ones) deposited thicknesses to ensure perfect coverage of the structures. eG3D process also has the ability to be used as a repair process for non-continuous widely used PVD Cu seed layers but also be deposited directly on the barrier material. These 2 layers were evaluated together in a 300mm TSV integration schemes of both 10×120 mid process and 1×10 μm High Density structures and qualified electrically. The paper will discuss the deposition process development leading to simultaneously allow copper filling of the very wide range of TSVs on the same process equipment and using the same chemicals. We will then present integration results as well as electrical test of TSV daisy chains of both mid and High density TSVs showing excellent yield for all TSV size and integration schemes.

Writing of high-density patterned perpendicular media with a conventional longitudinal recording head

2002 ◽  
Vol 80 (18) ◽  
pp. 3409-3411 ◽  
Author(s):  
M. Albrecht ◽  
A. Moser ◽  
C. T. Rettner ◽  
S. Anders ◽  
T. Thomson ◽  
...  
Keyword(s):  
High Density ◽  
Recording Head ◽  
Perpendicular Media ◽  
Longitudinal Recording

Low noise Co/Pd multilayer perpendicular media with granular seed layer

2000 ◽  
Vol 36 (5) ◽  
pp. 2384-2386 ◽  
Author(s):  
H. Ohmori ◽  
A. Maesaka
Keyword(s):  
Seed Layer ◽  
Low Noise ◽  
Perpendicular Media

Ultra-high-density phase-change storage using AlNiGd metallic glass thin film as recording layer

2010 ◽  
Vol 18 (1) ◽  
pp. 119-122 ◽  
Author(s):  
Mei Ling Lee ◽  
K. Khine Win ◽  
Chee Lip Gan ◽  
Lu Ping Shi
Keyword(s):  
Thin Film ◽  
Metallic Glass ◽  
Phase Change ◽  
High Density ◽  
Recording Layer

Sputtered Ti-Cu as a superior barrier and seed layer for panel-based high-density RDL wiring structures

2015 ◽  
Author(s):  
Chandrasekharan Nair ◽  
Fabio Pieralisi ◽  
Fuhan Liu ◽  
Venky Sundaram ◽  
Uwe Muehlfeld ◽  
...  
Keyword(s):  
Seed Layer ◽  
High Density
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