Frequency and transient response of yoke flux for 45/55 NiFe and CoTaZr thin film write heads

1999 ◽  
Vol 35 (5) ◽  
pp. 2508-2510 ◽  
Author(s):  
J. Jury ◽  
P. George ◽  
J.H. Judy
Keyword(s):  
Thin Film ◽  
Transient Response ◽  
Write Heads

P-14: Transient Response Properties of Nitrogen-Doped Amorphous InGaZnO Thin Film Transistors

2018 ◽  
Vol 49 (1) ◽  
pp. 1231-1234
Author(s):  
Chengyuan Dong ◽  
Xianyu Tong ◽  
Haiting Xie ◽  
Lei Zhang ◽  
Guochao Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Transient Response ◽  
Thin Film Transistors ◽  
Response Properties ◽  
Nitrogen Doped ◽  
Amorphous Ingazno

High speed characteristics of thin film write heads at deep submicron track width

2000 ◽  
Vol 87 (9) ◽  
pp. 5416-5418 ◽  
Author(s):  
Chris Y. Mao ◽  
Jian-Gang Zhu ◽  
Robert M. White
Keyword(s):  
Thin Film ◽  
High Speed ◽  
Deep Submicron ◽  
Track Width ◽  
Write Heads

Yoke flux reversal time in thin-film write heads

1995 ◽  
Vol 31 (6) ◽  
pp. 2657-2659 ◽  
Author(s):  
K.B. Klaassen ◽  
J.C.L. van Peppen
Keyword(s):  
Thin Film ◽  
Flux Reversal ◽  
Write Heads ◽  
Reversal Time

Combined thin film magnetoresistive read, inductive write heads

1976 ◽  
Vol 12 (6) ◽  
pp. 716-718 ◽  
Author(s):  
J.v. Lier ◽  
G. Koel ◽  
W.v. Gestel ◽  
L. Postma ◽  
J. Gerkema ◽  
...  
Keyword(s):  
Thin Film ◽  
Write Heads

Time resolved Kerr microscopy: Magnetization dynamics in thin film write heads

1999 ◽  
Vol 35 (2) ◽  
pp. 637-642 ◽  
Author(s):  
C.H. Back ◽  
J. Heidmann ◽  
J. McCord
Keyword(s):  
Thin Film ◽  
Magnetization Dynamics ◽  
Time Resolved ◽  
Write Heads

Comparing the transient response of a resistive-type sensor with a thin film thermocouple during the post-exposure bake process

2004 ◽  
Author(s):  
Kenneth G. Kreider ◽  
David P. DeWitt ◽  
Joel B. Fowler ◽  
James E. Proctor ◽  
William A. Kimes ◽  
...  
Keyword(s):  
Thin Film ◽  
Transient Response ◽  
Post Exposure ◽  
Thin Film Thermocouple ◽  
Post Exposure Bake ◽  
Resistive Type

Transient Thermoelectric Cooling of thin Film Devices

2000 ◽  
Vol 626 ◽  
Author(s):  
A. Ravi Kumar ◽  
R.G. Yang ◽  
G. Chen ◽  
J.-P. Fleurial
Keyword(s):  
Thin Film ◽  
Semiconductor Lasers ◽  
Transient Response ◽  
System Analysis ◽  
Thermal Response ◽  
Integrated System ◽  
Thermoelectric Coolers ◽  
Transient Thermal ◽  
Transient Thermal Response ◽  
Thin Film Devices

ABSTRACTWe report theoretical analysis for the transient thermal response of thermoelectric (TE) element and the integrated thin-film devices. It is predicted that the TE element geometry and applied current pulse shape influences the transient response of the system. Analysis for the integrated systems shows that the transient response is affected by the effusivity of the attached mass. This analysis provides a means to examine the effectiveness of thermal management of the thin-film devices, particularly semiconductor lasers, using the transient mode operation of thermoelectric coolers, and also suggests geometry constraints and optimum pulse shapes for an integrated system.

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