scholarly journals A precision capacitance cell for measurement of thin film out-of-plane expansion. III. Conducting and semiconducting materials

2001 ◽  
Vol 50 (5) ◽  
pp. 1212-1215 ◽  
Author(s):  
C.R. Snyder ◽  
F.I. Mopsik
Keyword(s):  
Thin Film ◽  
Semiconducting Materials ◽  
Out Of Plane ◽  
Capacitance Cell

scholarly journals Thin film bi-epitaxy and transition characteristics of TiO2/TiN buffered VO2 on Si(100) substrates

MRS Advances ◽  
2016 ◽  
Vol 1 (37) ◽  
pp. 2635-2640 ◽  
Author(s):  
Adele Moatti ◽  
Reza Bayati ◽  
Srinivasa Rao Singamaneni ◽  
Jagdish Narayan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Frequency Factor ◽  
Misfit Strain ◽  
Buffer Layers ◽  
Intrinsic Defects ◽  
Domain Matching Epitaxy ◽  
Out Of Plane

ABSTRACTBi-epitaxial VO2 thin films with [011] out-of-plane orientation were integrated with Si(100) substrates through TiO2/TiN buffer layers. At the first step, TiN is grown epitaxially on Si(100), where a cube-on-cube epitaxy is achieved. Then, TiN was oxidized in-situ ending up having epitaxial r-TiO2. Finally, VO2 was deposited on top of TiO2. The alignment across the interfaces was stablished as VO2(011)║TiO2(110)║TiN(100)║Si(100) and VO2(110) /VO2(010)║TiO2(011)║TiN(112)║Si(112). The inter-planar spacing of VO2(010) and TiO2(011) equal to 2.26 and 2.50 Å, respectively. This results in a 9.78% tensile misfit strain in VO2(010) lattice which relaxes through 9/10 alteration domains with a frequency factor of 0.5, according to the domain matching epitaxy paradigm. Also, the inter-planar spacing of VO2(011) and TiO2(011) equals to 3.19 and 2.50 Å, respectively. This results in a 27.6% compressive misfit strain in VO2(011) lattice which relaxes through 3/4 alteration domains with a frequency factor of 0.57. We studied semiconductor to metal transition characteristics of VO2/TiO2/TiN/Si heterostructures and established a correlation between intrinsic defects and magnetic properties.

In-plane versus out-of-plane dielectric response in the thin-film relaxorPb(Sc1∕2Ta1∕2)O3

2006 ◽  
Vol 73 (21) ◽  
Author(s):  
K. Brinkman ◽  
A. Tagantsev ◽  
V. Sherman ◽  
D. Su ◽  
N. Setter
Keyword(s):  
Thin Film ◽  
Dielectric Response ◽  
Out Of Plane ◽  
Plane Versus

scholarly journals Reusable Chemically-Micropatterned Substrates via Sequential Photoinitiated Thiol-Ene Reactions as Template for Perovskite Thin-Film Microarrays

2019 ◽  
Author(s):  
Kurt Waldo E. Sy Piecco ◽  
Juvinch R. Vicente ◽  
Joseph R. Pyle ◽  
David C. Ingram ◽  
Martin E. Kordesch ◽  
...  
Keyword(s):  
Thin Film ◽  
Carboxylic Acid ◽  
Organic Solvents ◽  
Spin Coating ◽  
Precursor Solution ◽  
Contact Angles ◽  
Patterned Substrates ◽  
Semiconducting Materials ◽  
Ene Reactions ◽  
Patterned Surface

<p>Patterning semiconducting materials are important for many applications such as microelectronics, displays, and photodetectors. Lead halide perovskites are an emerging class of semiconducting materials that can be patterned via solution-based methods. Here we report an all-benchtop patterning strategy by first generating a patterned surface with contrasting wettabilities to organic solvents that have been used in the perovskite precursor solution then spin-coating the solution onto the patterned surface. The precursor solution only stays in the area with higher affinity (wettability). We applied sequential sunlight-initiated thiol-ene reactions to functionalize (and pattern) both glass and conductive fluorine-doped tin oxide (FTO) transparent glass surfaces. The functionalized surfaces were measured with the solvent contact angles of water and different organic solvents and were further characterized by XPS, selective fluorescence staining, and selective DNA adsorption. By simply spin-coating and baking the perovskite precursor solution on the patterned substrates, we obtained perovskite thin-film microarrays. The spin-coated perovskite arrays were characterized by XRD, AFM, and SEM. We concluded that Patterned substrate prepared via sequential sunlight-initiated thiol-ene click reactions is suitable to fabricate perovskite arrays via the benchtop process. In addition, the same patterned substrates can be reused several times until a favorable perovskite microarray is acquired. Among a few conditions we have tested, DMSO solvent and modified FTO surfaces with alternatively carboxylic acid and alkane is the best combination to obtain high-quality perovskite microarrays. The solvent contact angle of DMSO on carboxylic acid-modified FTO surface is nearly zero and 65±3<sup>o</sup> on octadecane modified FTO surface.</p>

Epitaxial growth of La–Ca–Mn–O thin film on out-of-plane twinned LaAlO[sub 3]

2000 ◽  
Vol 18 (5) ◽  
pp. 2437 ◽  
Author(s):  
J.-H. Song ◽  
K. K. Kim ◽  
Y. J. Oh ◽  
H.-J. Jung ◽  
W. K. Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Epitaxial Growth ◽  
Out Of Plane

Ferroelectric Oxide Thin Film with an Out-of-Plane Electrical Conductivity

Nano Letters ◽  
2019 ◽  
Vol 20 (2) ◽  
pp. 1047-1053
Author(s):  
Tingting Yao ◽  
Yixiao Jiang ◽  
Chunlin Chen ◽  
Xuexi Yan ◽  
Ang Tao ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Conductivity ◽  
Oxide Thin Film ◽  
Out Of Plane ◽  
Ferroelectric Oxide

A In Situ Measuring Method for Stress Gradient of a MEMS Film

2009 ◽  
Vol 60-61 ◽  
pp. 357-360 ◽  
Author(s):  
Han Chen ◽  
Hua Rong ◽  
Ming Wang
Keyword(s):  
Thin Film ◽  
Circular Plate ◽  
Stress Gradient ◽  
Measuring Method ◽  
Mechanical Parameter ◽  
Curvature Radius ◽  
Mems Devices ◽  
Out Of Plane

The stress gradient of a deposited thin-film is a mechanical parameter that affects the performance of MEMS devices, so in-situ measuring stress gradient of a thin-film is great significant. A new in-situ measuring method based on a center-anchored circular plate is presented. The Mirau interferometer has been used to measure the out-of-plane height at the edge of circular plate, then the curvature radius of the plate and the stress gradient of the film can be calculated. The measuring method has been verified by CoventorWare. The accuracy of the presented measuring method is ideal. The advantages of the method also have been discussed.

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