A precision capacitance cell for measurement of thin film out-of-plane expansion. I. Thermal expansion

1998 ◽  
Vol 69 (11) ◽  
pp. 3889-3895 ◽  
Author(s):  
Chad R. Snyder ◽  
Frederick I. Mopsik
Keyword(s):  
Thin Film ◽  
Thermal Expansion ◽  
Out Of Plane ◽  
Capacitance Cell

scholarly journals Thin film bi-epitaxy and transition characteristics of TiO2/TiN buffered VO2 on Si(100) substrates

MRS Advances ◽  
2016 ◽  
Vol 1 (37) ◽  
pp. 2635-2640 ◽  
Author(s):  
Adele Moatti ◽  
Reza Bayati ◽  
Srinivasa Rao Singamaneni ◽  
Jagdish Narayan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Frequency Factor ◽  
Misfit Strain ◽  
Buffer Layers ◽  
Intrinsic Defects ◽  
Domain Matching Epitaxy ◽  
Out Of Plane

ABSTRACTBi-epitaxial VO2 thin films with [011] out-of-plane orientation were integrated with Si(100) substrates through TiO2/TiN buffer layers. At the first step, TiN is grown epitaxially on Si(100), where a cube-on-cube epitaxy is achieved. Then, TiN was oxidized in-situ ending up having epitaxial r-TiO2. Finally, VO2 was deposited on top of TiO2. The alignment across the interfaces was stablished as VO2(011)║TiO2(110)║TiN(100)║Si(100) and VO2(110) /VO2(010)║TiO2(011)║TiN(112)║Si(112). The inter-planar spacing of VO2(010) and TiO2(011) equal to 2.26 and 2.50 Å, respectively. This results in a 9.78% tensile misfit strain in VO2(010) lattice which relaxes through 9/10 alteration domains with a frequency factor of 0.5, according to the domain matching epitaxy paradigm. Also, the inter-planar spacing of VO2(011) and TiO2(011) equals to 3.19 and 2.50 Å, respectively. This results in a 27.6% compressive misfit strain in VO2(011) lattice which relaxes through 3/4 alteration domains with a frequency factor of 0.57. We studied semiconductor to metal transition characteristics of VO2/TiO2/TiN/Si heterostructures and established a correlation between intrinsic defects and magnetic properties.

In-plane versus out-of-plane dielectric response in the thin-film relaxorPb(Sc1∕2Ta1∕2)O3

2006 ◽  
Vol 73 (21) ◽  
Author(s):  
K. Brinkman ◽  
A. Tagantsev ◽  
V. Sherman ◽  
D. Su ◽  
N. Setter
Keyword(s):  
Thin Film ◽  
Dielectric Response ◽  
Out Of Plane ◽  
Plane Versus

Epitaxial growth of La–Ca–Mn–O thin film on out-of-plane twinned LaAlO[sub 3]

2000 ◽  
Vol 18 (5) ◽  
pp. 2437 ◽  
Author(s):  
J.-H. Song ◽  
K. K. Kim ◽  
Y. J. Oh ◽  
H.-J. Jung ◽  
W. K. Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Epitaxial Growth ◽  
Out Of Plane

Synthesis of negative thermal expansion HfW2O8 thin film using pulsed laser deposition

2014 ◽  
Vol 40 (9) ◽  
pp. 13855-13859 ◽  
Author(s):  
Hongfei Liu ◽  
Gang Wang ◽  
Zhiping Zhang ◽  
Kunmin Pan ◽  
Xianghua Zeng
Keyword(s):  
Thin Film ◽  
Thermal Expansion ◽  
Pulsed Laser Deposition ◽  
Negative Thermal Expansion ◽  
Pulsed Laser ◽  
Laser Deposition
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