Epitaxial growth of La–Ca–Mn–O thin film on out-of-plane twinned LaAlO[sub 3]

2000 ◽  
Vol 18 (5) ◽  
pp. 2437 ◽  
Author(s):  
J.-H. Song ◽  
K. K. Kim ◽  
Y. J. Oh ◽  
H.-J. Jung ◽  
W. K. Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Epitaxial Growth ◽  
Out Of Plane

Epitaxial Growth of Sr0.3Ba0.7Nb2O6 Thin Films Prepared by Sol-Gel Process

1999 ◽  
Vol 606 ◽  
Author(s):  
Keishi Nishio ◽  
Jirawat Thongrueng ◽  
Yuichi Watanabe ◽  
Toshio Tsuchiya
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Epitaxial Growth ◽  
Raw Materials ◽  
Substrate Surface ◽  
Sol Gel ◽  
Tungsten Bronze ◽  
Monomethyl Ether ◽  
Tetragonal Tungsten Bronze ◽  
Sol Gel Process

AbstructWe succeeded in the preparation of strontium-barium niobate (Sr0.3Ba0.7Nb2O6 : SBN30)that have a tetragonal tungsten bronze type structure thin films on SrTiO3 (100), STO, or La doped SrTiO3 (100), LSTO, single crystal substrates by a spin coating process. LSTO substrate can be used for electrode. A homogeneous coating solution was prepared with Sr and Ba acetates and Nb(OEt)5 as raw materials, and acetic acid and diethylene glycol monomethyl ether as solvents. The coating thin films were sintered at temperature from 700 to 1000°C for 10 min in air. It was confirmed that the thin films on STO substrate sintered above 700°C were in the epitaxial growth because the 16 diffraction spots were observed on the pole figure using (121) reflection. The <130> and <310> direction of the thin film on STO were oriented with the c-axis in parallel to the substrate surface. However, the diffraction spots of thin film on LSTO substrate sintered at 700°C were corresponds to the expected pattern for (110).

scholarly journals Thin film bi-epitaxy and transition characteristics of TiO2/TiN buffered VO2 on Si(100) substrates

MRS Advances ◽  
2016 ◽  
Vol 1 (37) ◽  
pp. 2635-2640 ◽  
Author(s):  
Adele Moatti ◽  
Reza Bayati ◽  
Srinivasa Rao Singamaneni ◽  
Jagdish Narayan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Frequency Factor ◽  
Misfit Strain ◽  
Buffer Layers ◽  
Intrinsic Defects ◽  
Domain Matching Epitaxy ◽  
Out Of Plane

ABSTRACTBi-epitaxial VO2 thin films with [011] out-of-plane orientation were integrated with Si(100) substrates through TiO2/TiN buffer layers. At the first step, TiN is grown epitaxially on Si(100), where a cube-on-cube epitaxy is achieved. Then, TiN was oxidized in-situ ending up having epitaxial r-TiO2. Finally, VO2 was deposited on top of TiO2. The alignment across the interfaces was stablished as VO2(011)║TiO2(110)║TiN(100)║Si(100) and VO2(110) /VO2(010)║TiO2(011)║TiN(112)║Si(112). The inter-planar spacing of VO2(010) and TiO2(011) equal to 2.26 and 2.50 Å, respectively. This results in a 9.78% tensile misfit strain in VO2(010) lattice which relaxes through 9/10 alteration domains with a frequency factor of 0.5, according to the domain matching epitaxy paradigm. Also, the inter-planar spacing of VO2(011) and TiO2(011) equals to 3.19 and 2.50 Å, respectively. This results in a 27.6% compressive misfit strain in VO2(011) lattice which relaxes through 3/4 alteration domains with a frequency factor of 0.57. We studied semiconductor to metal transition characteristics of VO2/TiO2/TiN/Si heterostructures and established a correlation between intrinsic defects and magnetic properties.

In-plane versus out-of-plane dielectric response in the thin-film relaxorPb(Sc1∕2Ta1∕2)O3

2006 ◽  
Vol 73 (21) ◽  
Author(s):  
K. Brinkman ◽  
A. Tagantsev ◽  
V. Sherman ◽  
D. Su ◽  
N. Setter
Keyword(s):  
Thin Film ◽  
Dielectric Response ◽  
Out Of Plane ◽  
Plane Versus

EPITAXIAL GROWTH OF SrF2 ON Ge(111)-c(2×8) AS STUDIED BY PHOTOELECTRON DIFFRACTION AND HOLOGRAPHY

1999 ◽  
Vol 06 (06) ◽  
pp. 1085-1089 ◽  
Author(s):  
S. OMORI ◽  
T. KOZAKAI ◽  
Y. NIHEI
Keyword(s):  
Thin Film ◽  
Epitaxial Growth ◽  
Atomic Structure ◽  
Forward Scattering ◽  
Epitaxial Thin Film ◽  
Photoelectron Diffraction ◽  
Interference Fringes

We have investigated the photoelectron diffraction (PED) from a SrF 2 epitaxial thin film on Ge(111) from the viewpoint of holographic inversion for imaging the atomic structure. The holographic interference fringes were retrieved from the PED pattern including a wide variety of diffraction features via averaging the pattern around each forward-scattering peak. Furthermore, another method for enhancing holographic fringes by subtracting one photoelectron hologram from another at slightly different kinetic energies was theoretically investigated.

Epitaxial growth of β-Ga2O3 (-201) thin film on fourfold symmetry CeO2 (001) substrate for heterogeneous integrations

2021 ◽  
Author(s):  
Xiao Tang ◽  
Kuanghui Li ◽  
Che-Hao Liao ◽  
Dongxing Zheng ◽  
chen Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Epitaxial Growth ◽  
Gas Sensors ◽  
High Power ◽  
Wide Bandgap ◽  
Semiconductor Material ◽  
Uv Detectors ◽  
Wide Bandgap Semiconductor ◽  
Fourfold Symmetry

β-Ga2O3 is a wide bandgap semiconductor material promising for many fields such as gas sensors, UV detectors, and high power electronics. Until now, most epitaxial β-Ga2O3 thin films could only...

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