Photonic high-frequency capacitance-voltage characterization of interface states in metal-oxide-semiconductor capacitors

2002 ◽  
Vol 49 (3) ◽  
pp. 526-528 ◽  
Author(s):  
D.M. Kim ◽  
H.C. Kim ◽  
H.T. Kim
Keyword(s):  
Metal Oxide ◽  
High Frequency ◽  
Interface States ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Capacitance Voltage

Characterization of Graphene Gate Electrodes for Metal-Oxide-Semiconductor Devices

MRS Advances ◽  
2017 ◽  
Vol 2 (02) ◽  
pp. 103-108 ◽  
Author(s):  
Yanbin An ◽  
Aniruddh Shekhawat ◽  
Ashkan Behnam ◽  
Eric Pop ◽  
Ant Ural
Keyword(s):  
Metal Oxide ◽  
High Frequency ◽  
Tunneling Current ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Heterogeneous Integration ◽  
Gate Electrodes ◽  
Mos Devices ◽  
Capacitance Voltage

ABSTRACT We fabricate and characterize metal-oxide-semiconductor (MOS) devices with graphene as the gate electrode, 5 or 10 nm thick silicon dioxide as the insulator, and silicon as the semiconductor substrate. We find that Fowler-Nordheim tunneling dominates the gate current for the 10 nm oxide device. We also study the temperature dependence of the tunneling current in these devices in the range 77 to 300 K and extract the effective tunneling barrier height as a function of temperature for the 10 nm oxide device. Furthermore, by performing high frequency capacitance-voltage measurements, we observe a local capacitance minimum under accumulation, particularly for the 5 nm oxide device. By fitting the data using numerical simulations based on the modified density of states of graphene in the presence of charged impurities, we show that this local minimum results from the quantum capacitance of graphene. These results provide important insights for the heterogeneous integration of graphene into conventional silicon technology.

Characterization of Subgap Density-of-States by Sub-Bandgap Optical Charge Pumping in In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors

2020 ◽  
Vol 20 (7) ◽  
pp. 4287-4291
Author(s):  
Han Bin Yoo ◽  
Seong Kwang Kim ◽  
Junyeap Kim ◽  
Jintae Yu ◽  
Sung-Jin Choi ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect Transistors ◽  
Channel Length ◽  
Interface States ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Bandgap Energy ◽  
Charge Pumping ◽  
Optical Charge

We report an experimental characterization of the interface states (Dit(E)) by using the subthreshold drain current with optical charge pumping effect in In0.53Ga0.47As metal-oxide-semiconductor fieldeffect transistors (MOSFETs). The interface states are derived from the difference between the dark and photo states of the current–voltage characteristics. We used a sub-bandgap photon (i.e., with the photon energy lower than the bandgap energy, Eph < Eg) to optically excite trapped carriers over the bandgap in In0.53Ga0.47As MOSFETs. We combined a gate bias-dependent capacitance model to determine the channel length-independent oxide capacitance. Then, we estimated the channel length-independent interface states in In0.53Ga0.47As MOSFETs having different channel lengths (Lch = 5, 10, and 25 [μm]) for a fixed overlap length (Lov = 5 [μm]).

Capacitance–voltage characterization of surface-treated Al2O3/GaN metal–oxide–semiconductor structures

2013 ◽  
Vol 109 ◽  
pp. 10-12 ◽  
Author(s):  
Sung-Bum Bae ◽  
Ki-Won Kim ◽  
Yong Soo Lee ◽  
Jung-Hee Lee ◽  
Youngho Bae ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Structures ◽  
Capacitance Voltage
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