A new model for the low-frequency noise and the noise level variation in polysilicon emitter BJTs

2002 ◽  
Vol 49 (3) ◽  
pp. 514-520 ◽  
Author(s):  
M. Sanden ◽  
O. Marinov ◽  
M.J. Deen ◽  
M. Ostling
Keyword(s):  
Noise Level ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Level Variation ◽  
New Model ◽  
Polysilicon Emitter

STATISTICAL SIMULATIONS OF THE LOW-FREQUENCY NOISE IN POLYSILICON EMITTER BIPOLAR TRANSISTORS USING A MODEL BASED ON GENERATION-RECOMBINATION CENTERS

2001 ◽  
Vol 01 (02) ◽  
pp. L51-L60 ◽  
Author(s):  
MARTIN SANDÉN ◽  
MIKAEL ÖSTLING ◽  
OGNIAN MARINOV ◽  
M. JAMAL DEEN
Keyword(s):  
Noise Level ◽  
Low Frequency ◽  
Bipolar Transistors ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Average Spectrum ◽  
Proposed Model ◽  
Physically Based ◽  
Recombination Centers ◽  
Polysilicon Emitter

In this work, a new, physically based model for the low-frequency noise is investigated by statistical simulations. The proposed model is based only on superposition of generation-recombination centers, and can predict the frequency-, current- and area-dependence of the low-frequency noise, as well as the area-dependence of the variation in the noise level. Measurements on Bipolar Junction Transistors (BJTs) are found to be in excellent agreement with the simulated results. For devices with large emitter areas AE, the model predicts a spectral density SIn ~ 1/f. For devices with submicron AE, SIn strongly deviates from a 1/f behavior, and several generation-recombination centers dominate the spectrum. However, the average spectrum <SIn>, calculated from several BJTs with identical AE, has a frequency dependence ~ 1/f. The extracted areal trap density within the frequency range 1-104 Hz is nT = 3 × 109 cm -2. The simulations show that the condition for observing g-r noise in the spectrum, strongly depends on the number of traps NT, as well as the distribution of the corresponding energy level for the traps. The relative noise level is found to vary in a non-symmetrical way around < SIn>, especially for small AE. For AE < 0.1 μ m 2, the model predicts a relative variation in the noise level [Formula: see text] below <SIn>, and [Formula: see text] above <SIn>. For AE > 0.3 μ m 2, the variation is found to be [Formula: see text].

Crowding effects and low frequency noise in polysilicon emitter bipolar transistors

1999 ◽  
Vol 43 (5) ◽  
pp. 931-936 ◽  
Author(s):  
Jean-Marc Routoure ◽  
Jacques Lepaisant ◽  
Daniel Bloyet ◽  
Serge Bardy ◽  
Jacques Lebailly
Keyword(s):  
Low Frequency ◽  
Bipolar Transistors ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Crowding Effects ◽  
Polysilicon Emitter

Low Frequency Noise Level Variations and Annoyance in Working Environments

1997 ◽  
Vol 16 (2) ◽  
pp. 81-87 ◽  
Author(s):  
Kjell Holmberg ◽  
Ulf Landström ◽  
Anders Kjellberg
Keyword(s):  
Noise Level ◽  
Low Frequency ◽  
Personal Control ◽  
Frequency Noise ◽  
Strongly Correlated ◽  
Low Frequency Noise ◽  
Working Environments ◽  
Independent Variable ◽  
Short Time ◽  
Made In

Indicators of noise level variations were correlated to noise annoyance in workplaces. This was made in a selected group exposed to low frequency noise. The low frequency noise group, consisting of 35 individuals, was selected from a group of 337 persons from various working environments. The noise was recorded at each person's workplace. The subjective annoyance response was rated in a questionnaire. Further questions regarding situational and individual factors were also included. The indicators were statistical countings of successive differences between discrete Leq values over short time periods. Interaction between noise level variations and other factors was also included in the study. The correlation was studied by multiple regression analysis with the rated annoyance as dependent variable. Personal control over the noise was entered into the analysis as a first independent variable. Change in R2 when entering the level variations reflected the relative importance of them in comparison to noise level. According to the results low frequency noise level variation explains about 11 percent of the annoyance variance in this material. In the study it was also found that personal control over the low frequency noise was strongly correlated to rated annoyance and that noise level was not.

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