Low-frequency noise sources in polysilicon emitter bipolar transistors: Influence of hot-electron-induced degradation

1993 ◽  
Author(s):  
A. Mounib ◽  
F. Balestra ◽  
N. Mathieu ◽  
J. Brini ◽  
G. Ghibaudo ◽  
...  
Keyword(s):  
Low Frequency ◽  
Bipolar Transistors ◽  
Frequency Noise ◽  
Hot Electron ◽  
Low Frequency Noise ◽  
Noise Sources ◽  
Polysilicon Emitter

Crowding effects and low frequency noise in polysilicon emitter bipolar transistors

1999 ◽  
Vol 43 (5) ◽  
pp. 931-936 ◽  
Author(s):  
Jean-Marc Routoure ◽  
Jacques Lepaisant ◽  
Daniel Bloyet ◽  
Serge Bardy ◽  
Jacques Lebailly
Keyword(s):  
Low Frequency ◽  
Bipolar Transistors ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Crowding Effects ◽  
Polysilicon Emitter

STATISTICAL SIMULATIONS OF THE LOW-FREQUENCY NOISE IN POLYSILICON EMITTER BIPOLAR TRANSISTORS USING A MODEL BASED ON GENERATION-RECOMBINATION CENTERS

2001 ◽  
Vol 01 (02) ◽  
pp. L51-L60 ◽  
Author(s):  
MARTIN SANDÉN ◽  
MIKAEL ÖSTLING ◽  
OGNIAN MARINOV ◽  
M. JAMAL DEEN
Keyword(s):  
Noise Level ◽  
Low Frequency ◽  
Bipolar Transistors ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Average Spectrum ◽  
Proposed Model ◽  
Physically Based ◽  
Recombination Centers ◽  
Polysilicon Emitter

In this work, a new, physically based model for the low-frequency noise is investigated by statistical simulations. The proposed model is based only on superposition of generation-recombination centers, and can predict the frequency-, current- and area-dependence of the low-frequency noise, as well as the area-dependence of the variation in the noise level. Measurements on Bipolar Junction Transistors (BJTs) are found to be in excellent agreement with the simulated results. For devices with large emitter areas AE, the model predicts a spectral density SIn ~ 1/f. For devices with submicron AE, SIn strongly deviates from a 1/f behavior, and several generation-recombination centers dominate the spectrum. However, the average spectrum <SIn>, calculated from several BJTs with identical AE, has a frequency dependence ~ 1/f. The extracted areal trap density within the frequency range 1-104 Hz is nT = 3 × 109 cm -2. The simulations show that the condition for observing g-r noise in the spectrum, strongly depends on the number of traps NT, as well as the distribution of the corresponding energy level for the traps. The relative noise level is found to vary in a non-symmetrical way around < SIn>, especially for small AE. For AE < 0.1 μ m 2, the model predicts a relative variation in the noise level [Formula: see text] below <SIn>, and [Formula: see text] above <SIn>. For AE > 0.3 μ m 2, the variation is found to be [Formula: see text].

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