Effect of series and parallel resistance on low-frequency noise level in semiconductor lasers

2005 ◽  
Author(s):  
Guijun Hu
Keyword(s):  
Semiconductor Lasers ◽  
Noise Level ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Parallel Resistance

Low-Frequency Noise Measurement and Parameters Extraction for Semiconductor Lasers

Applied laser ◽  
2014 ◽  
Vol 34 (4) ◽  
pp. 355-358
Author(s):  
曹军胜 Cao Junsheng ◽  
张俊 Zhang Jun ◽  
郜峰利 Gao Fengli ◽  
宁永强 Ning Yongqiang
Keyword(s):  
Semiconductor Lasers ◽  
Low Frequency ◽  
Noise Measurement ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Parameters Extraction

Low Frequency Noise Level Variations and Annoyance in Working Environments

1997 ◽  
Vol 16 (2) ◽  
pp. 81-87 ◽  
Author(s):  
Kjell Holmberg ◽  
Ulf Landström ◽  
Anders Kjellberg
Keyword(s):  
Noise Level ◽  
Low Frequency ◽  
Personal Control ◽  
Frequency Noise ◽  
Strongly Correlated ◽  
Low Frequency Noise ◽  
Working Environments ◽  
Independent Variable ◽  
Short Time ◽  
Made In

Indicators of noise level variations were correlated to noise annoyance in workplaces. This was made in a selected group exposed to low frequency noise. The low frequency noise group, consisting of 35 individuals, was selected from a group of 337 persons from various working environments. The noise was recorded at each person's workplace. The subjective annoyance response was rated in a questionnaire. Further questions regarding situational and individual factors were also included. The indicators were statistical countings of successive differences between discrete Leq values over short time periods. Interaction between noise level variations and other factors was also included in the study. The correlation was studied by multiple regression analysis with the rated annoyance as dependent variable. Personal control over the noise was entered into the analysis as a first independent variable. Change in R2 when entering the level variations reflected the relative importance of them in comparison to noise level. According to the results low frequency noise level variation explains about 11 percent of the annoyance variance in this material. In the study it was also found that personal control over the low frequency noise was strongly correlated to rated annoyance and that noise level was not.

CHARACTERIZATIONS OF LOW-FREQUENCY NOISE IN LASER-DEBONDED HVPE-GROWN GaN THIN FILMS

2004 ◽  
Vol 04 (03) ◽  
pp. L437-L445
Author(s):  
C. P. CHAN ◽  
B. H. LEUNG ◽  
Y. H. LOKE ◽  
H. C. MAN ◽  
T. M. YUE ◽  
...  
Keyword(s):  
Noise Level ◽  
Low Frequency ◽  
Localized States ◽  
Excess Noise ◽  
Maximum Temperature ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Experimental Proof ◽  
Simulation Results ◽  
Dimensional Simulation

Low-frequency excess noise was measured on laser-debonded HVPE-grown GaN films. While the Schottky MSM devices, fabricated on 5 μm-thick films, demonstrated reduction in the noise level, the ohmic MSM devices showed significant increase in the low-frequency noise. To account for the data we conducted two-dimensional simulation of the temperature of the GaN layer as a function of time and distance from the GaN/sapphire interface. The simulation results show that the temperature at the GaN/sapphire interface may rise up to 1400 K, whereas the maximum temperature at the GaN surface was about 400 K at the. Based on the experimental data and the simulation results, it is postulated that the illumination of the GaN sample by high-power excimer laser led to the decomposition of GaN at the GaN/sapphire interface resulting in the generation of localized states at the interface. The same process may have led to some thermal annealing effect at the GaN surface. To provide experimental proof of the hypothesis, detailed low-frequency noise measurement on ohmic MSM devices fabricated on 20 μm-thick GaN films were performed. The results indicate similar noise level for both the debonded and the control devices.

MODELING AND SIMULATION OF COUPLING EFFECT ON LOW FREQUENCY NOISE IN ADVANCED SOI MOSFETS

2008 ◽  
Vol 08 (01) ◽  
pp. L87-L94 ◽  
Author(s):  
LEILY ZAFARI ◽  
JALAL JOMAAH ◽  
GERARD GHIBAUDO
Keyword(s):  
Film Thickness ◽  
Noise Level ◽  
Coupling Effect ◽  
Silicon Film ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Interface Quality ◽  
Fully Depleted ◽  
Scattering Rate

Low frequency noise modeling and numerical simulation have been carried out to study the influence of the back interface quality and the silicon film thickness in Fully Depleted SOI MOSFETs, with special emphasis on the coupling effect. In devices with a standard film thickness, the noise level is higher than for an equivalent interface in bulk device, which could be a great concern for analog applications. On the other hand, it has been shown that in very thin SOI devices with a symmetrical structure (Double Gate architecture), the reduction of electric field in the silicon film, induces a conduction channel in the middle of the film, away from both interfaces which in turn reduces the scattering rate of carriers, decreasing the noise level.

scholarly journals Semianalytical Modelling and 2D Numerical Simulation of Low-Frequency Noise in Advanced N-Channel FDSOI MOSFETs

2020 ◽  
Vol 2020 ◽  
pp. 1-10
Author(s):  
T. Boutchacha ◽  
G. Ghibaudo
Keyword(s):  
Noise Level ◽  
Low Frequency ◽  
Silicon On Insulator ◽  
Excess Noise ◽  
Channel Noise ◽  
Flat Band ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Sources ◽  
Strong Inversion

Thorough investigations of the low-frequency noise (LFN) in a fully depleted silicon-on-insulator technology node have been accomplished, pointing out on the contribution of the buried oxide (BOX) and the Si-BOX interface to the total drain current noise level. A new analytical multilayer gate stack flat-band voltage fluctuation-based model has been established, and 2D numerical simulations have been carried out to identify the main noise sources and related parameters on which the LFN depends. The increase of the noise at strong inversion could be explained by the access resistance contribution to the 1/f noise. Therefore, considering uncorrelated noise sources in the channel and in the source/drain regions, the total low-frequency noise can simply be obtained by adding to the channel noise the contribution of the excess noise originating from the access region (Δr). Moreover, only two fit parameters are used in this work: the trap volumetric density in the BOX, and the 1/f access noise level originating from the access series resistance, which is assumed to be the same for the front and the back interfaces.

Low-Frequency Noise Measurement and Parameters Extraction for Semiconductor Lasers

Applied laser ◽  
2014 ◽  
Vol 34 (4) ◽  
pp. 355-358
Author(s):  
曹军胜 Cao Junsheng ◽  
张俊 Zhang Jun ◽  
郜峰利 Gao Fengli ◽  
宁永强 Ning Yongqiang
Keyword(s):  
Semiconductor Lasers ◽  
Low Frequency ◽  
Noise Measurement ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Parameters Extraction

Low-frequency noise characteristics of Pb-salt semiconductor lasers

1979 ◽  
Vol 18 (7) ◽  
pp. 1088 ◽  
Author(s):  
R. S. Eng ◽  
A. W. Mantz ◽  
T. R. Todd
Keyword(s):  
Semiconductor Lasers ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Characteristics

A MULTIMODE SIMULATION MODEL OF MODE-COMPETITION LOW-FREQUENCY NOISE IN SEMICONDUCTOR LASERS

2001 ◽  
Vol 01 (03) ◽  
pp. L163-L170 ◽  
Author(s):  
MOUSTAFA AHMED ◽  
MINORU YAMADA ◽  
SALAH ABDULRHMANN
Keyword(s):  
Semiconductor Lasers ◽  
Low Frequency ◽  
Single Mode ◽  
Mode Competition ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Sources ◽  
Noise Characteristics ◽  
A New Technique ◽  
Lasing Modes

A multimode model is proposed to simulate the mode-competition low-frequency noise in semiconductor lasers taking account of the possible mechanisms of nonlinear gain saturation. A new technique is reported to generate the Langevin noise sources that induce spontaneous-emission fluctuations in dynamics of the lasing modes. The model is applied to simulate the intensity noise in AlGaAs lasers. Agreement of the simulated noise results with the experimental measurements is found. Correlation of the noise characteristics with dynamics of the mode competition is newly introduced. The low-frequency noise is enhanced when the dynamics exhibit mode hopping or a jittering single mode, and is suppressed when the stable single-mode operation is achieved.

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