scholarly journals A high-voltage modulator for high-power RF source research

1991 ◽  
Vol 38 (4) ◽  
pp. 817-821 ◽  
Author(s):  
W.J. Mulligan ◽  
S.C. Chen ◽  
G. Bekefi ◽  
B.G. Danly ◽  
R.J. Temkin
Keyword(s):  
High Voltage ◽  
High Power ◽  
High Voltage Modulator

scholarly journals A high-voltage modulator for high-power RF source research

2002 ◽  
Author(s):  
W. Mulligan ◽  
G. Bekefi ◽  
S.C. Chen ◽  
B.G. Danly ◽  
R.J. Temkin
Keyword(s):  
High Voltage ◽  
High Power ◽  
High Voltage Modulator

scholarly journals High Power Impulse Magnetron Sputtering of In2O3/Sn Cold Sprayed Composite Target

Materials ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1228
Author(s):  
Marcin Winnicki ◽  
Artur Wiatrowski ◽  
Michał Mazur
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
High Voltage ◽  
High Power ◽  
Power Supply ◽  
Indium Tin Oxide ◽  
Volume Ratio ◽  
Cold Spraying ◽  
High Voltage Power Supply ◽  
Composite Target

High Power Impulse Magnetron Sputtering (HiPIMS) was used for deposition of indium tin oxide (ITO) transparent thin films at low substrate temperature. A hybrid-type composite target was self-prepared by low-pressure cold spraying process. Prior to spraying In2O3 and oxidized Sn powders were mixed in a volume ratio of 3:1. Composite In2O3/Sn coating had a mean thickness of 900 µm. HiPIMS process was performed in various mixtures of Ar:O2: (i) 100:0 vol.%, (ii) 90:10 vol.%, (iii) 75:25 vol.%, (iv) 50:50 vol.%, and (v) 0:100 vol.%. Oxygen rich atmosphere was necessary to oxidize tin atoms. Self-design, simple high voltage power switch capable of charging the 20 µF capacitor bank from external high voltage power supply worked as a power supply for an unbalanced magnetron source. ITO thin films with thickness in the range of 30–40 nm were obtained after 300 deposition pulses of 900 V and deposition time of 900 s. The highest transmission of 88% at λ = 550 nm provided 0:100 vol. % Ar:O2 mixture, together with the lowest resistivity of 0.03 Ω·cm.

Analysis of high voltage operation of gallium arsenide photoconductive switches used in high power applications

1999 ◽  
Vol 86 (3) ◽  
pp. 1754-1758 ◽  
Author(s):  
N. E. Islam ◽  
E. Schamiloglu ◽  
C. B. Fleddermann ◽  
J. S. H. Schoenberg ◽  
R. P. Joshi
Keyword(s):  
Gallium Arsenide ◽  
High Voltage ◽  
High Power ◽  
Photoconductive Switches

High-voltage test of feedthroughs for a high-power ICRF antenna

2001 ◽  
Vol 29 (2) ◽  
pp. 318-325 ◽  
Author(s):  
T. Fujii ◽  
S. Moriyama
Keyword(s):  
High Voltage ◽  
High Power
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