High-voltage test of feedthroughs for a high-power ICRF antenna

2001 ◽  
Vol 29 (2) ◽  
pp. 318-325 ◽  
Author(s):  
T. Fujii ◽  
S. Moriyama
Keyword(s):  
High Voltage ◽  
High Power

scholarly journals High Power Impulse Magnetron Sputtering of In2O3/Sn Cold Sprayed Composite Target

Materials ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1228
Author(s):  
Marcin Winnicki ◽  
Artur Wiatrowski ◽  
Michał Mazur
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
High Voltage ◽  
High Power ◽  
Power Supply ◽  
Indium Tin Oxide ◽  
Volume Ratio ◽  
Cold Spraying ◽  
High Voltage Power Supply ◽  
Composite Target

High Power Impulse Magnetron Sputtering (HiPIMS) was used for deposition of indium tin oxide (ITO) transparent thin films at low substrate temperature. A hybrid-type composite target was self-prepared by low-pressure cold spraying process. Prior to spraying In2O3 and oxidized Sn powders were mixed in a volume ratio of 3:1. Composite In2O3/Sn coating had a mean thickness of 900 µm. HiPIMS process was performed in various mixtures of Ar:O2: (i) 100:0 vol.%, (ii) 90:10 vol.%, (iii) 75:25 vol.%, (iv) 50:50 vol.%, and (v) 0:100 vol.%. Oxygen rich atmosphere was necessary to oxidize tin atoms. Self-design, simple high voltage power switch capable of charging the 20 µF capacitor bank from external high voltage power supply worked as a power supply for an unbalanced magnetron source. ITO thin films with thickness in the range of 30–40 nm were obtained after 300 deposition pulses of 900 V and deposition time of 900 s. The highest transmission of 88% at λ = 550 nm provided 0:100 vol. % Ar:O2 mixture, together with the lowest resistivity of 0.03 Ω·cm.

Analysis of high voltage operation of gallium arsenide photoconductive switches used in high power applications

1999 ◽  
Vol 86 (3) ◽  
pp. 1754-1758 ◽  
Author(s):  
N. E. Islam ◽  
E. Schamiloglu ◽  
C. B. Fleddermann ◽  
J. S. H. Schoenberg ◽  
R. P. Joshi
Keyword(s):  
Gallium Arsenide ◽  
High Voltage ◽  
High Power ◽  
Photoconductive Switches

A high-power, high-voltage diffused-germanium transistor

1960 ◽  
Vol 7 (2) ◽  
pp. 108-108
Author(s):  
D. Carley ◽  
T. Huffman
Keyword(s):  
High Voltage ◽  
High Power

scholarly journals Non-conventional Cascade Multilevel Inverter with Lower Number of Switches by Using Multilevel PWM

2021 ◽  
Vol 17 (1) ◽  
pp. 1-13
Author(s):  
Adala Abdali ◽  
Ali Abdulabbas ◽  
Habeeb Nekad
Keyword(s):  
High Voltage ◽  
High Power ◽  
Power Loss ◽  
Output Voltage ◽  
Lower Number ◽  
Multilevel Inverter ◽  
Three Phase ◽  
Multi Level ◽  
Simulation Results ◽  
Circuit Configuration

The multilevel inverter is attracting the specialist in medium and high voltage applications, among its types, the cascade H bridge Multi-Level Inverter (MLI), commonly used for high power and high voltage applications. The main advantage of the conventional cascade (MLI) is generated a large number of output voltage levels but it demands a large number of components that produce complexity in the control circuit, and high cost. Along these lines, this paper presents a brief about the non-conventional cascade multilevel topologies that can produce a high number of output voltage levels with the least components. The non-conventional cascade (MLI) in this paper was built to reduce the number of switches, simplify the circuit configuration, uncomplicated control, and minimize the system cost. Besides, it reduces THD and increases efficiency. Two topologies of non-conventional cascade MLI three phase, the Nine level and Seventeen level are presented. The PWM technique is used to control the switches. The simulation results show a better performance for both topologies. THD, the power loss and the efficiency of the two topologies are calculated and drawn to the different values of the Modulation index (ma).

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