Rapid thermal anneal of gate oxides for low thermal budget TFT's

1999 ◽  
Vol 46 (1) ◽  
pp. 63-69 ◽  
Author(s):  
N. Bhat ◽  
A.W. Wang ◽  
K.C. Saraswat
Keyword(s):  
Rapid Thermal Anneal ◽  
Gate Oxides ◽  
Thermal Budget ◽  
Low Thermal Budget

Electrical characterization of low thermal budget gate oxides on Si/Si0.8Ge0.2/Si substrates

2002 ◽  
Vol 46 (7) ◽  
pp. 991-995 ◽  
Author(s):  
Alok Sareen ◽  
Ann-Chatrin Lindgren ◽  
Per Lundgren ◽  
Stefan Bengtsson
Keyword(s):  
Electrical Characterization ◽  
Gate Oxides ◽  
Thermal Budget ◽  
Si Substrates ◽  
Low Thermal Budget

Study of Nitrogen Incorporation in Gate Oxides Using the Resistance to Oxidation Method

1996 ◽  
Vol 429 ◽  
Author(s):  
I. Sagnes ◽  
D. Laviale ◽  
M. Regache ◽  
F. Glowacki ◽  
L. Deutschmann ◽  
...  
Keyword(s):  
Nitrogen Concentration ◽  
Gate Oxide ◽  
Cmos Technology ◽  
Gate Oxides ◽  
Thermal Budget ◽  
Nitrogen Incorporation ◽  
Resistance To Oxidation ◽  
Low Thermal Budget ◽  
Direct Use ◽  
Low Nitrogen

Numerous nitridation processes have been studied to obtain very thin (≤ 6 nm), reproducible and reliable gate oxides. Recent results (1,2,3) have confirmed that i) the NO molecule is the species responsible for the nitrogen incorporation at the SiO2/Si interface and that ii) the direct use of NO gas allows the gate oxide to be nitrided at low thermal budget whilst maintaining the same advantages as those of N2O nitridation. NO nitridation of very thin oxides has so far been inadequately documented in terms of incorporated nitrogen concentration at the SiO2/Si interface. It is of prime importance to control the incorporation of a few nitrogen monolayers at the SiO2/Si interface, particularly for device performances in the 0. 18μm CMOS technology. In the following we present results on the control of low nitrogen concentration in pure NO atmosphere, with particular emphasis on a method based on the re-oxidation of nitrided oxides. This method can be used in a production line thus avoiding the high costs and long characterization times associated with SIMS measurements.

Ultra Low Thermal Budget Rapid Thermal Processing for Thin Gate Oxide Dielectrics: Reduction of Suboxide Transition Regions in Low Temperature Processed Si/SiO2 Structures by A 900°C 30 Second Rapid Thermal Anneal

1997 ◽  
Vol 470 ◽  
Author(s):  
G. Lucovsky ◽  
B. Hinds
Keyword(s):  
Low Temperature ◽  
Thermal Processing ◽  
Gate Dielectric ◽  
Rapid Thermal Processing ◽  
Rapid Thermal Anneal ◽  
Thermal Budget ◽  
Kinetic Effects ◽  
C 30 ◽  
Thin Gate Oxide ◽  
Low Thermal Budget

ABSTRACTDevice quality gate dielectric heterostructures have been prepared using a three step plasma/rapid thermal sequence [1] in which kinetic effects determine the time-temperature aspects of the processing. The steps for forming the interface and for depositing dielectric layers have been performed at low temperature, ∼300°C, by plasma-assisted processing. Following this a low rapid thermal anneal (RTA) provides interface and bulk dielectric chemical and structural relaxations, thereby yielding device performance and reliability essentially the same as obtained using higher thermal budget conventional or rapid thermal processing.

Low Thermal Budget Monolithic Integration of Evanescent-Coupled Ge-on-SOI Photodetector on Si CMOS Platform

2010 ◽  
Vol 16 (1) ◽  
pp. 106-113 ◽  
Author(s):  
Kah-Wee Ang ◽  
Tsung-Yang Liow ◽  
Ming-Bin Yu ◽  
Qing Fang ◽  
Junfeng Song ◽  
...  
Keyword(s):  
Monolithic Integration ◽  
Thermal Budget ◽  
Low Thermal Budget

Improved PBTI reliability in junction-less nFET fabricated at low thermal budget for 3D Sequential Integration

2018 ◽  
Author(s):  
Zhicheng Wu ◽  
Jacopo Franco ◽  
Anne Vandooren ◽  
Ben Kaczer ◽  
Philippe Roussel ◽  
...  
Keyword(s):  
Thermal Budget ◽  
Low Thermal Budget

Low Thermal Budget Crystallization of Amorphous Silicon by Nanoclusters

2009 ◽  
Vol 12 (9) ◽  
pp. H319 ◽  
Author(s):  
Il-Suk Kang ◽  
Sung-Hun Yu ◽  
Hyun-Sang Seo ◽  
Jeong-Hun Kim ◽  
Jun-Mo Yang ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Thermal Budget ◽  
Low Thermal Budget
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