Selective epitaxial growth silicon bipolar transistors for material characterization

1988 ◽  
Vol 35 (10) ◽  
pp. 1640-1644 ◽  
Author(s):  
J.W. Siekkinen ◽  
W.A. Klaasen ◽  
G.W. Neudeck
Keyword(s):  
Epitaxial Growth ◽  
Material Characterization ◽  
Bipolar Transistors ◽  
Selective Epitaxial Growth

A complementary selective epitaxial growth (CSEG) process and its application to high speed bipolar transistors

2002 ◽  
Author(s):  
J.W. Osenbach ◽  
A. Feygenson ◽  
H.C. Praefcke ◽  
A.J. Laduca ◽  
J.P. Gardner ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
High Speed ◽  
Bipolar Transistors ◽  
Selective Epitaxial Growth

Reduction of Base Access Resistance in AlGaN/GaN Heterojunction Bipolar Transistors using GaInN Base Cap Layer and Selective Epitaxial Growth

2005 ◽  
Vol 892 ◽  
Author(s):  
Jay M Shah ◽  
Thomas Gessmann ◽  
Hong Luo ◽  
Yangang Xi ◽  
Kaixuan Chen ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Epitaxial Growth ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Current Gain ◽  
Selective Epitaxial Growth ◽  
Offset Voltage ◽  
Specific Contact ◽  
Access Resistance ◽  
P Type

AbstractOne of the major challenges affecting the performance of Npn AlGaN/GaN heterojunction bipolar transistors (HBTs) is the high base access resistance, which is comprised of the base contact resistance and the base bulk resistance. A novel concept is proposed to reduce the base access resistance in Npn AlGaN/GaN HBTs by employing polarization-enhanced contacts and selective epitaxial growth of the base and emitter. In addition, this technique reduces the exposed base surface area, which results in a lower surface recombination current. Such a structure would enable better performance of AlGaN/GaN HBTs in terms of higher current gain and a lower offset voltage. Theoretical calculations on polarization-enhanced contacts predict p-type specific contact resistance lower than 10-5 Ωcm2. Experimental results using transmission line measurement (TLM) technique yield specific contact resistances of 5.6×10-4 Ωcm2 for polarization-enhanced p-type contacts and 7.8×10-2 Ωcm2 for conventional p-type contacts.

Material Characterization of Low-Temperature Silicon Epitaxial Growth on Patterned Oxidized Wafers by ULPCVD From SiH4/SiF4/H2

1990 ◽  
Vol 202 ◽  
Author(s):  
Tri-Rung Yew ◽  
Rafael Reif Reif
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Material Characterization ◽  
Large Scale ◽  
Chemical Vapor ◽  
Surface Cleaning ◽  
Selective Epitaxial Growth ◽  
Pressure Chemical ◽  
Scale Integration

ABSTRACTLow temperature silicon selective epitaxial growth on patterned oxidized wafers is becoming crucial to ultra large scale integration (ULSI) technologies. Low temperature processes can reduce dopant redistribution via solid state diffusion so that a sharp transition region can be obtained. This paper presents material characterization of epitaxial films grown on patterned oxidized wafers by ultralow pressure chemical vapor deposition (ULPCVD) from SiH4/SiF4/H2 (≤ 10 mTorr), in which SiF4 was used to explore its capability for selective epitaxial growth. The deposition temperature is 800°C. The effects of the SiF4 addition to SiH4/H2 are discussed. Defects in epitaxial layers resulting from a high composition of the SiF4 during deposition were characterized. Results of in–situ surface cleaning using a SiF4/H2 plasma are also presented.

Thick selective epitaxial growth of silicon at 960°C using silane only

1992 ◽  
Vol 18 (3) ◽  
pp. 237-246 ◽  
Author(s):  
N. Afshar-Hanaii ◽  
J.M. Bonar ◽  
A.G.R. Evans ◽  
G.J. Parker ◽  
C.M.K. Starbuck ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Selective Epitaxial Growth

Selective epitaxial growth of silicon in pancake reactors

1988 ◽  
Vol 43 (8) ◽  
pp. 2031-2036 ◽  
Author(s):  
M. Kastelic ◽  
I. Oh ◽  
C.G. Takoudis ◽  
J.A. Friedrich ◽  
G.W. Neudeck
Keyword(s):  
Epitaxial Growth ◽  
Selective Epitaxial Growth
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