A three-terminal band-trap-band tunneling model for drain engineering and substrate bias effect on GIDL in MOSFET

1998 ◽  
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Vol 178 ◽  
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Author(s):  
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Michelly de Souza ◽  
Sylvain Barraud ◽  
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1995 ◽  
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2018 ◽  
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2017 ◽  
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1980 ◽  
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pp. 1807-1808 ◽  
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Ryoji Ohkata ◽  
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2011 ◽  
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Jae S Son ◽  
Hyunsoo Yang ◽  
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Charanjit S Bhatia

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