A three-terminal band-trap-band tunneling model for drain engineering and substrate bias effect on GIDL in MOSFET
1998 ◽
Vol 45
(7)
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pp. 1518-1523
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Keyword(s):
2002 ◽
Vol 247
(3)
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pp. 339-344
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1998 ◽
Vol 16
(3)
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pp. 1745-1749
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1995 ◽
Vol 4
(4)
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pp. 366-369
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2018 ◽
Vol 458
◽
pp. 1043-1049
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2017 ◽
Vol 07
(07)
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pp. 35-38
1997 ◽
Vol 90
(1-2)
◽
pp. 35-41
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Keyword(s):
1980 ◽
Vol 19
(9)
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pp. 1807-1808
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