A theory of shot noise in quantum wells and applications in resonant tunneling heterojunction bipolar transistors

1991 ◽  
Vol 38 (2) ◽  
pp. 237-241 ◽  
Author(s):  
J. Han ◽  
F.S. Barnes
Keyword(s):  
Quantum Wells ◽  
Shot Noise ◽  
Heterojunction Bipolar Transistors ◽  
Resonant Tunneling ◽  
Bipolar Transistors

Co-integration of resonant tunneling and double heterojunction bipolar transistors on InP

1993 ◽  
Vol 14 (10) ◽  
pp. 472-474 ◽  
Author(s):  
A.C. Seabaugh ◽  
E.A. Beam ◽  
A.H. Taddiken ◽  
J.N. Randall ◽  
Y.-C. Kao
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Resonant Tunneling ◽  
Bipolar Transistors ◽  
Double Heterojunction

scholarly journals Atomic-Monolayer Two-Dimensional Lateral Quasi-Heterojunction Bipolar Transistors with Resonant Tunneling Phenomenon

ACS Nano ◽  
2017 ◽  
Vol 11 (11) ◽  
pp. 11015-11023 ◽  
Author(s):  
Che-Yu Lin ◽  
Xiaodan Zhu ◽  
Shin-Hung Tsai ◽  
Shiao-Po Tsai ◽  
Sidong Lei ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Resonant Tunneling ◽  
Bipolar Transistors ◽  
Two Dimensional ◽  
Tunneling Phenomenon ◽  
Atomic Monolayer

TEM evaluation of graded SixGe1-x heterolayers

1991 ◽  
Vol 49 ◽  
pp. 894-895
Author(s):  
N. David Theodore ◽  
Mamoru Tomozane ◽  
Ming Liaw
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Gas Flow ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Dark Field ◽  
Bipolar Transistors ◽  
Structural Quality ◽  
Weak Beam ◽  
Transmission Electron ◽  
And Behavior

There is extensive interest in SiGe for use in heterojunction bipolar transistors. SiGe/Si superlattices are also of interest because of their potential for use in infrared detectors and field-effect transistors. The processing required for these materials is quite compatible with existing silicon technology. However, before SiGe can be used extensively for devices, there is a need to understand and then control the origin and behavior of defects in the materials. The present study was aimed at investigating the structural quality of, and the behavior of defects in, graded SiGe layers grown by chemical vapor deposition (CVD).The structures investigated in this study consisted of Si1-xGex[x=0.16]/Si1-xGex[x= 0.14, 0.13, 0.12, 0.10, 0.09, 0.07, 0.05, 0.04, 0.005, 0]/epi-Si/substrate heterolayers grown by CVD. The Si1-xGex layers were isochronally grown [t = 0.4 minutes per layer], with gas-flow rates being adjusted to control composition. Cross-section TEM specimens were prepared in the 110 geometry. These were then analyzed using two-beam bright-field, dark-field and weak-beam images. A JEOL JEM 200CX transmission electron microscope was used, operating at 200 kV.

Sign in / Sign up

Export Citation Format

Share Document