Monolithic integration of resonant tunneling diodes and heterojunction bipolar transistors on patterned InP substrates

1998 ◽  
Vol 16 (3) ◽  
pp. 1413 ◽  
Author(s):  
D. H. Chow
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Resonant Tunneling ◽  
Bipolar Transistors ◽  
Monolithic Integration ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes ◽  
Inp Substrates

Nanofabricated SiO2-Si-SiO2 Resonant Tunneling Diodes

2000 ◽  
Vol 631 ◽  
Author(s):  
J. G. Fleming ◽  
E. Chow ◽  
S.-Y. Lin
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Resonance Tunneling ◽  
Tunneling Diodes

ABSTRACTResonance Tunneling Diodes (RTDs) are devices that can demonstrate very highspeed operation. Typically they have been fabricated using epitaxial techniques and materials not consistent with standard commercial integrated circuits. We report here the first demonstration of SiO2-Si-SiO2 RTDs. These new structures were fabricated using novel combinations of silicon integrated circuit processes.

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