Effects of inelastic scattering on interband tunneling in GaSb/AlSb/InAs/GaSb/AlSb/lnAs broken-gap interband tunneling structures

1998 ◽  
Vol 45 (6) ◽  
pp. 1213-1218 ◽  
Author(s):  
Meng Hwang Liu ◽  
Yeong Her Wang ◽  
Mau Phon Houng
Keyword(s):  
Inelastic Scattering ◽  
Interband Tunneling ◽  
Broken Gap

Negative transconductance and negative differential resistance in asymmetric narrow bandgap 2D–3D heterostructures

Nanoscale ◽  
2019 ◽  
Vol 11 (11) ◽  
pp. 4701-4706 ◽  
Author(s):  
Tiaoyang Li ◽  
Xuefei Li ◽  
Mengchuan Tian ◽  
Qianlan Hu ◽  
Xin Wang ◽  
...  
Keyword(s):  
Indium Arsenide ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Black Phosphorus ◽  
Band Alignment ◽  
Narrow Bandgap ◽  
Interband Tunneling ◽  
Broken Gap

We present a new tunneling transistor based on a 2D black phosphorus and 3D indium arsenide heterojunction with a broken-gap band alignment. The observed negative differential resistance and negative transconductance behaviors can be attributed to the interband tunneling.

New peculiarities of interband tunneling in broken-gap heterostructures

2004 ◽  
Author(s):  
A. Zakharova ◽  
S. T. Yen ◽  
K. A. Chao
Keyword(s):  
Interband Tunneling ◽  
Broken Gap

Effects of the doping levels on the characteristics of GaSb/AlSb/InAs/GaSb/AlSb/InAs broken-gap interband tunneling structures

1997 ◽  
Vol T69 ◽  
pp. 202-205
Author(s):  
M H Liu ◽  
Y H Wang ◽  
M P Houng ◽  
J F Chen ◽  
A Y Cho
Keyword(s):  
Interband Tunneling ◽  
Broken Gap

Effects of lattice mismatch and bulk anisotropy on interband tunneling in broken-gap heterostructures

2005 ◽  
Vol 97 (6) ◽  
pp. 063704 ◽  
Author(s):  
A. Zakharova ◽  
S. T. Yen ◽  
K. Nilsson ◽  
K. A. Chao
Keyword(s):  
Lattice Mismatch ◽  
Interband Tunneling ◽  
Bulk Anisotropy ◽  
Broken Gap

The Low-Temperature Characteristics of GaSb/AlSb/InAs/GaSb/AlSb/InAs Broken-Gap Interband Tunneling Structure

1995 ◽  
Author(s):  
Meng Hwang LIU ◽  
Yeong Her WANG ◽  
Mau Phon HOUNG ◽  
J. F. CHEN ◽  
Alfred Y. CHO
Keyword(s):  
Low Temperature ◽  
Temperature Characteristics ◽  
Interband Tunneling ◽  
Broken Gap

The Low-Temperature Characteristics of GaSb/AlSb/InAs/GaSb/AlSb/InAs Broken-Gap Interband Tunneling Structures

1996 ◽  
Vol 35 (Part 1, No. 2B) ◽  
pp. 1178-1183 ◽  
Author(s):  
Meng Hwang Liu ◽  
Yeong Her Wang ◽  
Mau Phon Houng ◽  
J. F. Chen ◽  
Alfred Y. Cho
Keyword(s):  
Low Temperature ◽  
Temperature Characteristics ◽  
Interband Tunneling ◽  
Broken Gap

Analysis of STEM micrographs of thick objects

1978 ◽  
Vol 36 (2) ◽  
pp. 106-107
Author(s):  
S. Golladay
Keyword(s):  
Inelastic Scattering ◽  
Multiple Scattering ◽  
Mass Distribution ◽  
Cross Sections ◽  
Phase Contrast ◽  
Image Point ◽  
Contrast Effects ◽  
Total Cross Sections ◽  
Elastic And Inelastic Scattering

The theory of multiple scattering has been worked out by Groves and comparisons have been made between predicted and observed signals for thick specimens observed in a STEM under conditions where phase contrast effects are unimportant. Independent measurements of the collection efficiencies of the two STEM detectors, calculations of the ratio σe/σi = R, where σe, σi are the total cross sections for elastic and inelastic scattering respectively, and a model of the unknown mass distribution are needed for these comparisons. In this paper an extension of this work will be described which allows the determination of the required efficiencies, R, and the unknown mass distribution from the data without additional measurements or models. Essential to the analysis is the fact that in a STEM two or more signal measurements can be made simultaneously at each image point.

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