The effects of GaSb/InAs broken gap on interband tunneling current of a GaSb/InAs/GaSb/AlSb/InAs tunneling structure

1992 ◽  
Vol 71 (9) ◽  
pp. 4432-4435 ◽  
Author(s):  
J. F. Chen ◽  
A. Y. Cho
1998 ◽  
Vol 84 (3) ◽  
pp. 1460-1466 ◽  
Author(s):  
Hiroto Kitabayashi ◽  
Takao Waho ◽  
Masafumi Yamamoto

Nanoscale ◽  
2019 ◽  
Vol 11 (11) ◽  
pp. 4701-4706 ◽  
Author(s):  
Tiaoyang Li ◽  
Xuefei Li ◽  
Mengchuan Tian ◽  
Qianlan Hu ◽  
Xin Wang ◽  
...  

We present a new tunneling transistor based on a 2D black phosphorus and 3D indium arsenide heterojunction with a broken-gap band alignment. The observed negative differential resistance and negative transconductance behaviors can be attributed to the interband tunneling.


2004 ◽  
Author(s):  
A. Zakharova ◽  
S. T. Yen ◽  
K. A. Chao

1997 ◽  
Vol T69 ◽  
pp. 202-205
Author(s):  
M H Liu ◽  
Y H Wang ◽  
M P Houng ◽  
J F Chen ◽  
A Y Cho

Author(s):  
Tyler A. Growden ◽  
Sriram Krishnamoorthy ◽  
Digbijoy N. Nath ◽  
Anisha Ramesh ◽  
Siddharth Rajan ◽  
...  

2005 ◽  
Vol 97 (6) ◽  
pp. 063704 ◽  
Author(s):  
A. Zakharova ◽  
S. T. Yen ◽  
K. Nilsson ◽  
K. A. Chao

1995 ◽  
Author(s):  
Meng Hwang LIU ◽  
Yeong Her WANG ◽  
Mau Phon HOUNG ◽  
J. F. CHEN ◽  
Alfred Y. CHO

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