Effects of lattice mismatch and bulk anisotropy on interband tunneling in broken-gap heterostructures

2005 ◽  
Vol 97 (6) ◽  
pp. 063704 ◽  
Author(s):  
A. Zakharova ◽  
S. T. Yen ◽  
K. Nilsson ◽  
K. A. Chao
Keyword(s):  
Lattice Mismatch ◽  
Interband Tunneling ◽  
Bulk Anisotropy ◽  
Broken Gap

Negative transconductance and negative differential resistance in asymmetric narrow bandgap 2D–3D heterostructures

Nanoscale ◽  
2019 ◽  
Vol 11 (11) ◽  
pp. 4701-4706 ◽  
Author(s):  
Tiaoyang Li ◽  
Xuefei Li ◽  
Mengchuan Tian ◽  
Qianlan Hu ◽  
Xin Wang ◽  
...  
Keyword(s):  
Indium Arsenide ◽  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Black Phosphorus ◽  
Band Alignment ◽  
Narrow Bandgap ◽  
Interband Tunneling ◽  
Broken Gap

We present a new tunneling transistor based on a 2D black phosphorus and 3D indium arsenide heterojunction with a broken-gap band alignment. The observed negative differential resistance and negative transconductance behaviors can be attributed to the interband tunneling.

New peculiarities of interband tunneling in broken-gap heterostructures

2004 ◽  
Author(s):  
A. Zakharova ◽  
S. T. Yen ◽  
K. A. Chao
Keyword(s):  
Interband Tunneling ◽  
Broken Gap

Study of Magnetic Properties of Cobalt Films Grown on GaAs (110) and Au (111) Substrates Using Ferromagnetic Resonance.

1991 ◽  
Vol 238 ◽  
Author(s):  
K. L. Hogue ◽  
C. Kota ◽  
H. M. Naik
Keyword(s):  
Magnetic Field ◽  
Ferromagnetic Resonance ◽  
Lattice Mismatch ◽  
Perpendicular Anisotropy ◽  
Induced Anisotropy ◽  
Field Orientation ◽  
Magnetic Field Orientation ◽  
Dc Magnetic Field ◽  
Stress Induced Anisotropy ◽  
Bulk Anisotropy

Ferromagnetic resonance (FMR) measurements on Co films of thicknesses 10–100 Å grown on GaAs (110) and Au (111) substrates have been made as a function of dc magnetic field orientation in a plane perpendicular to the film. Experimental data were fitted by writing the energy density expression including uniaxial perpendicular anisotropy terms up to second order and bulk anisotropy terms. Co films grown on Au (111) substrates show consistently a higher uniaxial perpendicular anisotropy compared to those grown on GaAs (110) for the same thickness of Co. This is attributed to stress induced anisotropy due to a lattice mismatch between Au (111) and Co layers.

Effects of the doping levels on the characteristics of GaSb/AlSb/InAs/GaSb/AlSb/InAs broken-gap interband tunneling structures

1997 ◽  
Vol T69 ◽  
pp. 202-205
Author(s):  
M H Liu ◽  
Y H Wang ◽  
M P Houng ◽  
J F Chen ◽  
A Y Cho
Keyword(s):  
Interband Tunneling ◽  
Broken Gap

The Low-Temperature Characteristics of GaSb/AlSb/InAs/GaSb/AlSb/InAs Broken-Gap Interband Tunneling Structure

1995 ◽  
Author(s):  
Meng Hwang LIU ◽  
Yeong Her WANG ◽  
Mau Phon HOUNG ◽  
J. F. CHEN ◽  
Alfred Y. CHO
Keyword(s):  
Low Temperature ◽  
Temperature Characteristics ◽  
Interband Tunneling ◽  
Broken Gap

The Low-Temperature Characteristics of GaSb/AlSb/InAs/GaSb/AlSb/InAs Broken-Gap Interband Tunneling Structures

1996 ◽  
Vol 35 (Part 1, No. 2B) ◽  
pp. 1178-1183 ◽  
Author(s):  
Meng Hwang Liu ◽  
Yeong Her Wang ◽  
Mau Phon Houng ◽  
J. F. Chen ◽  
Alfred Y. Cho
Keyword(s):  
Low Temperature ◽  
Temperature Characteristics ◽  
Interband Tunneling ◽  
Broken Gap
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