scholarly journals Monte Carlo simulation of electron transport properties in extremely thin SOI MOSFET's

1998 ◽  
Vol 45 (5) ◽  
pp. 1122-1126 ◽  
Author(s):  
F. Gamiz ◽  
J.A. Lopez-Villanueva ◽  
J.B. Roldan ◽  
J.E. Carceller ◽  
P. Cartujo
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Electron Transport ◽  
Transport Properties ◽  
Electron Transport Properties

Monte Carlo calculation of electron transport properties of bulk AlN

1998 ◽  
Vol 83 (3) ◽  
pp. 1446-1449 ◽  
Author(s):  
J. D. Albrecht ◽  
R. P. Wang ◽  
P. P. Ruden ◽  
M. Farahmand ◽  
K. F. Brennan
Keyword(s):  
Monte Carlo ◽  
Electron Transport ◽  
Transport Properties ◽  
Monte Carlo Calculation ◽  
Electron Transport Properties

Effects of Chirality and Diameter on Electron Transport Properties in Individual Semiconducting Carbon Nanotubes

2007 ◽  
Vol 1017 ◽  
Author(s):  
M. Zahed Kauser ◽  
P. Paul Ruden
Keyword(s):  
Carbon Nanotubes ◽  
Monte Carlo ◽  
Electron Transport ◽  
Transport Properties ◽  
Boltzmann Transport Equation ◽  
Single Wall Carbon Nanotubes ◽  
Iterative Technique ◽  
Boltzmann Transport ◽  
Ensemble Monte Carlo ◽  
Electron Transport Properties

AbstractWe report on the effects of chirality and diameter on the electron transport properties in individual semiconducting, single wall carbon nanotubes. The Boltzmann transport equation is solved indirectly by the Ensemble Monte Carlo method and directly by Rode's iterative technique. Results show considerable effects of chirality and group on band structure and transport properties of tubes with small diameters. However the effects of chirality and group become negligible for tubes with large diameters. Diameter affects these properties more strongly than either chirality or group.

Sign in / Sign up

Export Citation Format

Share Document