Study of the manufacturing feasibility of 1.5-nm direct-tunneling gate oxide MOSFETs: uniformity, reliability, and dopant penetration of the gate oxide

H.S. Momose; S.-I. Nakamura; T. Ohguro; T. Yoshitomi; E. Morifuji; T. Morimoto; Y. Katsumata; H. Iwai

doi:10.1109/16.661230

Study of the manufacturing feasibility of 1.5-nm direct-tunneling gate oxide MOSFETs: uniformity, reliability, and dopant penetration of the gate oxide

IEEE Transactions on Electron Devices ◽

10.1109/16.661230 ◽

1998 ◽

Vol 45 (3) ◽

pp. 691-700 ◽

Cited By ~ 81

Author(s):

H.S. Momose ◽

S.-I. Nakamura ◽

T. Ohguro ◽

T. Yoshitomi ◽

E. Morifuji ◽

...

Keyword(s):

Gate Oxide ◽

Direct Tunneling

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Evidence of hole direct tunneling through ultrathin gate oxide using P/sup +/ poly-SiGe gate

IEEE Electron Device Letters ◽

10.1109/55.767094 ◽

1999 ◽

Vol 20 (6) ◽

pp. 268-270 ◽

Cited By ~ 13

Author(s):

Wen-Chin Lee ◽

Tsu-Jae King ◽

Chenming Hu

Keyword(s):

Gate Oxide ◽

Direct Tunneling

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A novel leakage current separation technique in a direct tunneling regime gate oxide SONOS memory cell

IEEE International Electron Devices Meeting 2003 ◽

10.1109/iedm.2003.1269357 ◽

2004 ◽

Cited By ~ 11

Author(s):

S.S. Chung ◽

P.-Y. Chiang ◽

G. Chou ◽

C.-T. Huang ◽

P. Chen ◽

...

Keyword(s):

Leakage Current ◽

Memory Cell ◽

Gate Oxide ◽

Separation Technique ◽

Direct Tunneling

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Direct tunneling current model for MOS devices with ultra-thin gate oxide including quantization effect and polysilicon depletion effect

Solid State Communications ◽

10.1016/s0038-1098(02)00719-6 ◽

2003 ◽

Vol 125 (3-4) ◽

pp. 219-223 ◽

Cited By ~ 14

Author(s):

Xiaoyan Liu ◽

Jinfeng Kang ◽

Ruqi Han

Keyword(s):

Current Model ◽

Tunneling Current ◽

Gate Oxide ◽

Quantization Effect ◽

Direct Tunneling ◽

Mos Devices ◽

Depletion Effect ◽

Direct Tunneling Current ◽

Thin Gate Oxide

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Edge Direct Tunneling (EDT) Induced Drain and Gate Leakage in Ultrathin Gate Oxide MOSFETs

10.7567/ssdm.2000.b-3-1 ◽

2000 ◽

Author(s):

K. N. Yang ◽

H. T. Huang ◽

M. J. Chen ◽

Y. M. Lin ◽

M. H. Yu ◽

...

Keyword(s):

Gate Oxide ◽

Gate Leakage ◽

Direct Tunneling

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Study of wafer orientation dependence on performance and reliability of CMOS with direct-tunneling gate oxide

2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184) ◽

10.1109/vlsit.2001.934955 ◽

2002 ◽

Cited By ~ 3

Author(s):

H.S. Momose ◽

T. Ohguro ◽

S. Nakamura ◽

Y. Toyoshima ◽

H. Ishiuchi ◽

...

Keyword(s):

Gate Oxide ◽

Orientation Dependence ◽

Direct Tunneling ◽

Wafer Orientation

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Edge hole direct tunneling in off-state ultrathin gate oxide p-channel MOSFETs

International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) ◽

10.1109/iedm.2000.904410 ◽

2002 ◽

Cited By ~ 7

Author(s):

K.N. Yang ◽

H.T. Huang ◽

M.J. Chen ◽

Y.M. Lin ◽

M.C. Yu ◽

...

Keyword(s):

Gate Oxide ◽

Direct Tunneling

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Modeling the limits of gate oxide scaling with a Schrodinger-based method of direct tunneling gate currents of nanoscale MOSFETs

Proceedings of the 2001 1st IEEE Conference on Nanotechnology. IEEE-NANO 2001 (Cat. No.01EX516) ◽

10.1109/nano.2001.966444 ◽

2002 ◽

Cited By ~ 1

Author(s):

Chung-Kuang Huang ◽

N. Goldsman

Keyword(s):

Gate Oxide ◽

Direct Tunneling ◽

Nanoscale Mosfets

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Characterization and modeling of edge direct tunneling (EDT) leakage in ultrathin gate oxide MOSFETs

IEEE Transactions on Electron Devices ◽

10.1109/16.925242 ◽

2001 ◽

Vol 48 (6) ◽

pp. 1159-1164 ◽

Cited By ~ 42

Author(s):

K.N. Yang ◽

H.T. Huang ◽

M.J. Chen ◽

Y.M. Lin ◽

M.C. Yu ◽

...

Keyword(s):

Gate Oxide ◽

Direct Tunneling

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Degradation of direct-tunneling gate oxide under hot-hole injection

Applied Physics Letters ◽

10.1063/1.1290159 ◽

2000 ◽

Vol 77 (9) ◽

pp. 1384-1386 ◽

Cited By ~ 6

Author(s):

Kazuaki Deguchi ◽

Akihiro Ishida ◽

Shigeyasu Uno ◽

Yoshinari Kamakura ◽

Kenji Taniguchi

Keyword(s):

Gate Oxide ◽

Hole Injection ◽

Direct Tunneling

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Improvement of direct-tunneling gate leakage current in ultra-thin gate oxide CMOS with TiN gate electrode using non-doped selective epitaxial Si channel technique

International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) ◽

10.1109/iedm.1999.824275 ◽

2003 ◽

Author(s):

H.S. Momose ◽

T. Ohguro ◽

E. Morifuji ◽

H. Sugaya ◽

S. Nakamura ◽

...

Keyword(s):

Leakage Current ◽

Gate Oxide ◽

Gate Leakage Current ◽

Gate Leakage ◽

Gate Electrode ◽

Direct Tunneling ◽

Thin Gate Oxide

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