Grain boundary potential barrier inhomogeneities in low-pressure chemical vapor deposited polycrystalline silicon thin-film transistors

1997 ◽  
Vol 44 (9) ◽  
pp. 1563-1565 ◽  
Author(s):  
C.A. Dimitriadis
Keyword(s):  
Thin Film ◽  
Grain Boundary ◽  
Potential Barrier ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Silicon Thin Film ◽  
Chemical Vapor Deposited ◽  
Pressure Chemical ◽  
Barrier Inhomogeneities

Grain Boundary Characterisation in Sequentially Laterally Solidified Polycrystalline-Silicon Thin Film Transistors

2019 ◽  
Vol 8 (1) ◽  
pp. 211-216
Author(s):  
Antonio Valletta ◽  
Alessandra Bonfiglietti ◽  
Matteo Rapisarda ◽  
Alessandro Pecora ◽  
Luigi Mariucci ◽  
...  
Keyword(s):  
Thin Film ◽  
Grain Boundary ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon Thin Film

Investigation of the off-current in amorphous silicon thin film transistors for SiO2 and SiNx. gate insulators

1996 ◽  
Vol 424 ◽  
Author(s):  
Jeong Hyun Kim ◽  
Woong Sik Choi ◽  
Chan Hee Hong ◽  
Hoe Sup Soh
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
Interface State ◽  
State Density ◽  
Gate Insulator ◽  
Defect States ◽  
Silicon Thin Film ◽  
Pressure Chemical

AbstractThe off current behavior of hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) with an atmospheric pressure chemical vapor deposition (APCVD) silicon dioxide (SiO2) gate insulator were investigated at negative gate voltages. The a-Si:H TFT with SiO2 gate insulator has small off currents and large activation energy (Ea) of the off current compared to the a-Si:H TFT with SiNx gate insulator. The holes induced in the channel by negative gate voltage seem to be trapped in the defect states near the a-Si:H/SiO2 interface. The interface state density in the lower half of the band gap of a-Si:H/SiO2 appears to be much higher than that for a-Si:H/SiNx.

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