A temperature-dependent MOSFET inversion layer carrier mobility model for device and circuit simulation

1997 ◽  
Vol 44 (2) ◽  
pp. 343-345 ◽  
Author(s):  
Baohong Cheng ◽  
J. Woo
Keyword(s):  
Carrier Mobility ◽  
Circuit Simulation ◽  
Inversion Layer ◽  
Mobility Model ◽  
Temperature Dependent

Temperature-Dependent Ambipolar Charge Carrier Mobility in Large-Crystal Hybrid Halide Perovskite Thin Films

2019 ◽  
Vol 11 (23) ◽  
pp. 20838-20844 ◽  
Author(s):  
Alexander Biewald ◽  
Nadja Giesbrecht ◽  
Thomas Bein ◽  
Pablo Docampo ◽  
Achim Hartschuh ◽  
...  
Keyword(s):  
Thin Films ◽  
Charge Carrier ◽  
Carrier Mobility ◽  
Charge Carrier Mobility ◽  
Temperature Dependent ◽  
Large Crystal ◽  
Halide Perovskite

High thermoelectric performance in low-cost SnS0.91Se0.09 crystals

Science ◽  
2019 ◽  
Vol 365 (6460) ◽  
pp. 1418-1424 ◽  
Author(s):  
Wenke He ◽  
Dongyang Wang ◽  
Haijun Wu ◽  
Yu Xiao ◽  
Yang Zhang ◽  
...  
Keyword(s):  
Thermoelectric Materials ◽  
High Performance ◽  
Carrier Mobility ◽  
Figure Of Merit ◽  
Toxic Elements ◽  
Low Cost ◽  
Thermoelectric Performance ◽  
Tin Sulfide ◽  
Temperature Dependent ◽  
Earth Abundant

Thermoelectric technology allows conversion between heat and electricity. Many good thermoelectric materials contain rare or toxic elements, so developing low-cost and high-performance thermoelectric materials is warranted. Here, we report the temperature-dependent interplay of three separate electronic bands in hole-doped tin sulfide (SnS) crystals. This behavior leads to synergistic optimization between effective mass (m*) and carrier mobility (μ) and can be boosted through introducing selenium (Se). This enhanced the power factor from ~30 to ~53 microwatts per centimeter per square kelvin (μW cm−1 K−2 at 300 K), while lowering the thermal conductivity after Se alloying. As a result, we obtained a maximum figure of merit ZT (ZTmax) of ~1.6 at 873 K and an average ZT (ZTave) of ~1.25 at 300 to 873 K in SnS0.91Se0.09 crystals. Our strategy for band manipulation offers a different route for optimizing thermoelectric performance. The high-performance SnS crystals represent an important step toward low-cost, Earth-abundant, and environmentally friendly thermoelectrics.

High-Temperature Thermoelectric Properties of Pb1-xSnxTe:In

2007 ◽  
Vol 1044 ◽  
Author(s):  
Vladimir Jovovic ◽  
Suraj Joottu Thiagarajan ◽  
Joseph P. Heremans ◽  
Dmitry Khokhlov ◽  
Tanya Komissarova ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Fermi Level ◽  
Thermoelectric Properties ◽  
Carrier Mobility ◽  
Temperature Dependent ◽  
Resonant Energy ◽  
Properties Of Materials ◽  
Valence Bands ◽  
Increasing Temperature ◽  
Positive Effect

AbstractIndium in Pb1-xSnxTe alloys forms a resonant energy level in the conduction or valence bands, depending on x. In this study we investigate temperature dependence of the In level from 80 to 400K, complementing our previous work at 80 K. Measurements of electrical resistivity, thermopower, Hall and transverse Nernst-Ettinghausen effect are used to assess carrier mobility, Fermi level and scattering coefficient. Measurements are performed on a set of p and n type Pb1-xSnxTe:In with 0 < x < 30 at% and In up to 3 at%. We show that with increasing temperature the Fermi level crosses into the gap. It had been suggested theoretically that hybridization of the In level with one band at the Fermi level could have had a positive effect on the thermoelectric properties of materials, but the present results illustrate the need for temperature-dependent modeling and experimentation.

Carrier mobility model for simulation of SiC-based electronic devices

2002 ◽  
Vol 17 (9) ◽  
pp. 974-977 ◽  
Author(s):  
T T Mnatsakanov ◽  
M E Levinshtein ◽  
L I Pomortseva ◽  
S N Yurkov
Keyword(s):  
Carrier Mobility ◽  
Electronic Devices ◽  
Mobility Model
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