Entirely aluminum free 905-nm wavelength buried heterostructure laser by reactive ion etching and semi-insulating GaInP:Fe regrowth

1997 ◽  
Vol 44 (2) ◽  
pp. 339-340 ◽  
Author(s):  
S. Lourdudoss ◽  
A. Ovtchinnikov ◽  
O. Kjebon ◽  
S. Nilsson ◽  
L. Backbom ◽  
...  
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching ◽  
Heterostructure Laser ◽  
Buried Heterostructure

Buried heterostructure laser fabricated using reactive ion etching and gas source molecular beam epitaxy

1992 ◽  
Vol 60 (10) ◽  
pp. 1211-1213 ◽  
Author(s):  
J.‐L. Liévin ◽  
L. Le Gouézigou ◽  
D. Bonnevie ◽  
F. Gaborit ◽  
F. Poingt ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Gas Source ◽  
Heterostructure Laser ◽  
Buried Heterostructure

1.5 μm GaInAsP/InP buried‐heterostructure laser diode fabricated by reactive ion etching using a mixture of ethane and hydrogen

1990 ◽  
Vol 56 (17) ◽  
pp. 1641-1642 ◽  
Author(s):  
Teruhito Matsui ◽  
Ken‐ichi Ohtsuka ◽  
Hiroshi Sugimoto ◽  
Yuji Abe ◽  
Toshiyuki Ohishi
Keyword(s):  
Laser Diode ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Heterostructure Laser ◽  
Buried Heterostructure

Magnetron Reactive Ion Etching of GaAs and AIGaAs in CH4/H2/Ar Plasmas.

1996 ◽  
Author(s):  
George F. McLane ◽  
Paul Cooke ◽  
Robert P. Moerkirk
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching

Modification of the n-Surface Profile of AlGaInN LEDs by Changing the Gas-Mixture Composition During Reactive Ion Etching

2020 ◽  
Vol 54 (6) ◽  
pp. 672-676
Author(s):  
L. K. Markov ◽  
I. P. Smirnova ◽  
M. V. Kukushkin ◽  
A. S. Pavluchenko
Keyword(s):  
Reactive Ion Etching ◽  
Surface Profile ◽  
Mixture Composition ◽  
Gas Mixture ◽  
Ion Etching
Sign in / Sign up

Export Citation Format

Share Document