Modeling of minority-carrier transport in semiconductor regions with position-dependent material parameters at arbitrary injection levels

1996 ◽  
Vol 43 (8) ◽  
pp. 1256-1263 ◽  
Author(s):  
N.F. Rinaldi
Keyword(s):  
Carrier Transport ◽  
Minority Carrier ◽  
Material Parameters

Efficient lateral minority carrier transport in proton‐implanted p‐type silicon

1995 ◽  
Vol 67 (1) ◽  
pp. 88-90 ◽  
Author(s):  
D. C. Leung ◽  
P. R. Nelson ◽  
O. M. Stafsudd ◽  
J. B. Parkinson ◽  
G. E. Davis
Keyword(s):  
Carrier Transport ◽  
Minority Carrier ◽  
Type Silicon ◽  
P Type

scholarly journals Influence of minority carrier transport in the optical properties of double barrier diodes

2006 ◽  
Vol 36 (2a) ◽  
pp. 343-346 ◽  
Author(s):  
I. Camps ◽  
A. Vercik ◽  
L. F. dos Santos ◽  
Y. Galvão Gobato
Keyword(s):  
Optical Properties ◽  
Carrier Transport ◽  
Minority Carrier ◽  
Double Barrier

scholarly journals Minority carrier transport in p-ZnO nanowires

2011 ◽  
Vol 109 (1) ◽  
pp. 016107 ◽  
Author(s):  
Y. Lin ◽  
M. Shatkhin ◽  
E. Flitsiyan ◽  
L. Chernyak ◽  
Z. Dashevsky ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Minority Carrier ◽  
Zno Nanowires

Experimental study of the minority-carrier transport at the polysilicon—monosilicon interface

1985 ◽  
Vol 32 (4) ◽  
pp. 807-816 ◽  
Author(s):  
A. Neugroschel ◽  
M. Arienzo ◽  
Y. Komem ◽  
R.D. Isaac
Keyword(s):  
Experimental Study ◽  
Carrier Transport ◽  
Minority Carrier

Optically determined minority-carrier transport in GaAs/AlxGa1−xAs heterostructures

1993 ◽  
Vol 47 (23) ◽  
pp. 15601-15608 ◽  
Author(s):  
D. J. Wolford ◽  
G. D. Gilliland ◽  
T. F. Kuech ◽  
J. A. Bradley ◽  
H. P. Hjalmarson
Keyword(s):  
Carrier Transport ◽  
Minority Carrier

InSb: A Key Material for IR Detector Applications

1986 ◽  
Vol 90 ◽  
Author(s):  
S. R. Jost ◽  
V. F. Meikleham ◽  
T. H. Myers
Keyword(s):  
Minority Carrier ◽  
Bulk Material ◽  
Device Performance ◽  
Injection Device ◽  
Ir Detector ◽  
Material Parameters ◽  
Carrier Lifetimes ◽  
Minority Carrier Lifetimes ◽  
Growth Technology ◽  
Device Technology

ABSTRACTInSb has served as an important mid-wave IR (λ=3−5μm) detector material for several decades. In this presentation, we will briefly review General Electric's InSb Charge Injection Device technology. Emphasis will be placed on device performance as a function of material parameters. A new InSb materials technology utilizing liquid phase epitaxy will be described. This epitaxial growth technology improves InSb material parameters and increases minority carrier lifetimes by more than two orders of magnitude to near the Auger limit. Comparisons will be made between available bulk material parameters and that of the epitaxial material.

Minority-carrier transport parameters in CVD diamond

Carbon ◽  
1999 ◽  
Vol 37 (5) ◽  
pp. 811-816 ◽  
Author(s):  
S. Salvatori ◽  
M. C. Rossi ◽  
F. Galluzzi
Keyword(s):  
Carrier Transport ◽  
Minority Carrier ◽  
Cvd Diamond ◽  
Transport Parameters
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