Influence of hot carrier transport on the transient response of an InGaAs/InAlAs metal-semiconductor Schottky diode structure

1996 ◽  
Vol 43 (4) ◽  
pp. 664-665 ◽  
Author(s):  
A.F. Salem ◽  
K.F. Brennan
Keyword(s):  
Transient Response ◽  
Schottky Diode ◽  
Carrier Transport ◽  
Diode Structure ◽  
Hot Carrier

Coupled-Langevin-equation analysis of hot-carrier transport in semiconductors

1992 ◽  
Vol 45 (4) ◽  
pp. 1903-1906 ◽  
Author(s):  
Tilmann Kuhn ◽  
Lino Reggiani ◽  
Luca Varani
Keyword(s):  
Langevin Equation ◽  
Carrier Transport ◽  
Hot Carrier ◽  
Equation Analysis

Thermally activated current–voltage asymmetry in quantum-well inter-subband photodetectors

1996 ◽  
Vol 74 (S1) ◽  
pp. 9-15 ◽  
Author(s):  
P. V. Kolev ◽  
M. J. Deen ◽  
H. C. Liu ◽  
Jianmeng Li ◽  
M. Buchanan ◽  
...  
Keyword(s):  
Quantum Well ◽  
Carrier Transport ◽  
Transport Phenomena ◽  
Infrared Region ◽  
Avalanche Photodetectors ◽  
Long Wavelength ◽  
Hot Carrier ◽  
Thermally Activated ◽  
Current Voltage ◽  
Long Wavelength Infrared

Continuing research interest in quantum-well inter-subband-based devices can be associated with its prospects for numerous optoelectronic applications in the long wavelength infrared region. This paper presents experimentally measured field dependence of the thermally activated effective-barrier lowering in quantum-well inter-subband photodetectors (QWIPs). This barrier lowering is considered to be the main cause of the commonly observed asymmetry in the current–voltage characteristics of QWIPs. The research results presented here are important for understanding the factors determining the dark-current mechanisms that are crucial for further improvement in the characteristics of these devices. The study of current-carrier transport phenomena in a quantum well is also of interest for developing quantum-well lasers and avalanche photodetectors based on intraband processes, and also transistors based on ballistic or hot carrier transport phenomena.

Transient Hot-Carrier Transport

1991 ◽  
pp. 173-241
Author(s):  
David K. Ferry ◽  
Robert O. Grondin
Keyword(s):  
Carrier Transport ◽  
Hot Carrier

Hot Carrier Transport in SiGe/Si Two-Dimensional Hole Gases

1996 ◽  
pp. 449-452 ◽  
Author(s):  
G. Brunthaler ◽  
G. Bauer ◽  
G. Braithwaite ◽  
N. L. Mattey ◽  
P. Phillips ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Two Dimensional ◽  
Hot Carrier

scholarly journals Maximum Entropy Principle within A Total Energy Scheme for Hot-carrier Transport in Semiconductor Devices

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 381-386 ◽  
Author(s):  
M. Trovato ◽  
L. Reggiani
Keyword(s):  
Maximum Entropy ◽  
Carrier Transport ◽  
Maximum Entropy Principle ◽  
Average Energy ◽  
Band Model ◽  
Hot Carrier ◽  
Hydrodynamic Calculations ◽  
Entropy Principle ◽  
The Moment ◽  
Total Average

By extending the maximum entropy principle within a scheme in total average energy we obtain a closed system of hydrodynamic equations for a full nonparabolic band model in which all the unknown constitutive functions are completely determined. The theory is validated by comparing hydrodynamic calculations with Monte Carlo simulations performed for bulk and submicron Si structures at 300 K. In the general framework of the moment theory a systematic study of small-signal response functions is provided.

Unveiling hot carrier relaxation and carrier transport mechanisms in quasi-two-dimensional layered perovskites

2020 ◽  
Vol 8 (47) ◽  
pp. 25402-25410
Author(s):  
Dabin Lin ◽  
Lin Ma ◽  
Wenjun Ni ◽  
Cheng Wang ◽  
Fangteng Zhang ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Two Dimensional ◽  
Transport Mechanisms ◽  
Carrier Relaxation ◽  
Hot Carrier ◽  
Layered Perovskites ◽  
2D To 3D

Ultrafast sub-ps hot carrier relaxation followed by subsequent ps carrier transport from layered 2D to 3D-like perovskite phases is demonstrated.

Balance-Equation Approach to Hot-Carrier Transport in Semiconductors

1992 ◽  
Vol 06 (07) ◽  
pp. 805-936 ◽  
Author(s):  
X.L. Lei ◽  
N.J.M. Horing
Keyword(s):  
Steady State ◽  
Balance Equation ◽  
Carrier Transport ◽  
Thermal Noise ◽  
Transport Theory ◽  
Equation Approach ◽  
Balance Equations ◽  
Hot Carrier ◽  
Linear And Nonlinear ◽  
And Diffusion

The balance-equation approach to nonlinear hot-carrier transport theory, formulated by Lei and Ting (1984), is addressed in this comprehensive review. A central feature is the role of strong electron-electron interactions in promoting rapid thermalization about the drifted transport state and the concomitant substantial simplification of the transport theory. This physical feature is embodied in the initial density matrix chosen to represent the unperturbed carrier system. Force and energy balance equations are formulated for the dc steady state, ac dynamic and transient cases of charge conduction, including memory effects. The scattering mechanisms include impurity and phonon interactions along with dynamic nonlocal screening effects due to carrier-carrier interactions. Both linear and nonlinear resistivities are discussed in the degenerate and nondegenerate statistical regimes. Interesting phenomena such as electron cooling and thermal noise and diffusion are discussed as well. Semiconductor microstructure transport is described for both linear and nonlinear hot carrier conduction. In this connection, quasi-2D-systems, heterojunctions, and quantum well superlattices are treated with attention to steady state, transient and high frequency transport, including, for example, superlattice plasmon resonance structure. Type-II superlattice transport is reviewed as well as type-I, and electron-hole drag is treated in conjunction with negative minority electron mobility in a quantum well. Multivalley semiconductors are discussed in some detail. Furthermore, attention is also focused on the center-of-mass velocity fluctuation, Langevin-type equation and thermal noise and diffusion for microstructures and multivalley systems. A number of particularly important phenomena are examined from the balance-equation point of view, such as nonequilibrium phonons, higher order scattering effects and weak localization, hydrodynamic equations for weakly nonuniform systems, and the intracollisional field effect. Alternative formulations and interpretations of the balance-equation approach are reviewed. The distinction between this many-particle, isothermal, balance-equation theory and the noninteracting (single-particle) adiabatic transport theory is discussed to clarify issues subject to controversy in the literature. Finally, we give a brief review of recent developments in the balance-equation approach: investigation of the distribution function in balance-equation theory, improved calculations for GaAs/AlGaAs heterojunctions, extension of the balance equations to an abitrary energy band and recent work on superlattice miniband transport.

Long-range hot-carrier transport in hybrid perovskites visualized by ultrafast microscopy

Science ◽  
2017 ◽  
Vol 356 (6333) ◽  
pp. 59-62 ◽  
Author(s):  
Zhi Guo ◽  
Yan Wan ◽  
Mengjin Yang ◽  
Jordan Snaider ◽  
Kai Zhu ◽  
...  
Keyword(s):  
Long Range ◽  
Carrier Transport ◽  
Hot Carrier

Hot-Carrier Solar Cells: Modeling Carrier Transport

2019 ◽  
pp. 53-92
Author(s):  
François Gibelli ◽  
Laurent Lombez ◽  
Jean-François Guillemoles
Keyword(s):  
Solar Cells ◽  
Carrier Transport ◽  
Hot Carrier
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