Thermally activated current–voltage asymmetry in quantum-well inter-subband photodetectors

1996 ◽  
Vol 74 (S1) ◽  
pp. 9-15 ◽  
Author(s):  
P. V. Kolev ◽  
M. J. Deen ◽  
H. C. Liu ◽  
Jianmeng Li ◽  
M. Buchanan ◽  
...  
Keyword(s):  
Quantum Well ◽  
Carrier Transport ◽  
Transport Phenomena ◽  
Infrared Region ◽  
Avalanche Photodetectors ◽  
Long Wavelength ◽  
Hot Carrier ◽  
Thermally Activated ◽  
Current Voltage ◽  
Long Wavelength Infrared

Continuing research interest in quantum-well inter-subband-based devices can be associated with its prospects for numerous optoelectronic applications in the long wavelength infrared region. This paper presents experimentally measured field dependence of the thermally activated effective-barrier lowering in quantum-well inter-subband photodetectors (QWIPs). This barrier lowering is considered to be the main cause of the commonly observed asymmetry in the current–voltage characteristics of QWIPs. The research results presented here are important for understanding the factors determining the dark-current mechanisms that are crucial for further improvement in the characteristics of these devices. The study of current-carrier transport phenomena in a quantum well is also of interest for developing quantum-well lasers and avalanche photodetectors based on intraband processes, and also transistors based on ballistic or hot carrier transport phenomena.

Normal Incidence Intersubband Transitions in InGaAs/GaAs Quantum Dots With Non-monotonic Shift

2003 ◽  
Vol 776 ◽  
Author(s):  
M. L. Hussein ◽  
W. Q. Ma ◽  
G.J. Salamo
Keyword(s):  
Quantum Dots ◽  
Molecular Beam ◽  
Normal Incidence ◽  
Peak Shift ◽  
Infrared Region ◽  
Optical Absorption Coefficient ◽  
Intersubband Transitions ◽  
Long Wavelength ◽  
Absorbance Peak ◽  
Long Wavelength Infrared

AbstractMultiple layers of self assembled In0.3Ga0.7As quantum dots of different size were grown on GaAs (100) using molecular beam epitaxy. Fourier-transform infrared spectroscopy shows absorption in the long-wavelength infrared region (8–10 νm) under normal incidence. The absorbance peak shift with dot size was investigated and revealed non-monotonic behavior of intersubband transitions. The optical absorption coefficient was calculated to be in order of 3.8×103 cm-2.

Germanium Far Infrared Blocked Impurity Band Detectors

1997 ◽  
Vol 484 ◽  
Author(s):  
C. S. Olsen ◽  
J. W. Beeman ◽  
W. L. Hansen ◽  
E. E. Hallerab
Keyword(s):  
High Purity ◽  
Far Infrared ◽  
Impurity Band ◽  
Infrared Detection ◽  
Long Wavelength ◽  
Current Voltage ◽  
Heavily Doped ◽  
Absorbing Layer ◽  
Blocked Impurity Band Detectors ◽  
Long Wavelength Infrared

AbstractWe report on the development of Germanium Blocked Impurity Band (BIB) photoconductors for long wavelength infrared detection in the 100 to 250.μm region. Liquid Phase Epitaxy (LPE) was used to grow the high purity blocking layer, and in some cases, the heavily doped infrared absorbing layer that comprise theses detectors. To achieve the stringent demands on purity and crystalline perfection we have developed a high purity LPE process which can be used for the growth of high purity as well as purely doped Ge epilayers. The low melting point, high purity metal, Pb, was used as a solvent. Pb has a negligible solubility <1017 cm−3 in Ge at 650°C and is isoelectronic with Ge. We have identified the residual impurities Bi, P, and Sb in the Ge epilayers and have determined that the Pb solvent is the source. Experiments are in progress to purify the Pb. The first tests of BIB structures with the purely doped absorbing layer grown on high purity substrates look very promising. The detectors exhibit extended wavelength cutoff when compared to standard Ge:Ga photoconductors (155 μm vs. 120 μm) and show the expected asymmetric current-voltage dependencies. We are currently optimizing doping and layer thickness to achieve the optimum responsivity, Noise Equivalent Power (NEP), and dark current in our devices.

Long wavelength infrared 128*128 Al/sub x/Ga/sub 1-x/As/GaAs quantum well infrared camera and imaging system

1993 ◽  
Vol 40 (11) ◽  
pp. 1957-1963 ◽  
Author(s):  
G.C. Bethea ◽  
B.F. Levine ◽  
M.T. Asom ◽  
R.E. Leibenguth ◽  
J.W. Stayt ◽  
...  
Keyword(s):  
Quantum Well ◽  
Imaging System ◽  
Infrared Camera ◽  
Long Wavelength ◽  
Long Wavelength Infrared
Sign in / Sign up

Export Citation Format

Share Document