Unveiling hot carrier relaxation and carrier transport mechanisms in quasi-two-dimensional layered perovskites

2020 ◽  
Vol 8 (47) ◽  
pp. 25402-25410
Author(s):  
Dabin Lin ◽  
Lin Ma ◽  
Wenjun Ni ◽  
Cheng Wang ◽  
Fangteng Zhang ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Two Dimensional ◽  
Transport Mechanisms ◽  
Carrier Relaxation ◽  
Hot Carrier ◽  
Layered Perovskites ◽  
2D To 3D

Ultrafast sub-ps hot carrier relaxation followed by subsequent ps carrier transport from layered 2D to 3D-like perovskite phases is demonstrated.

Hot Carrier Transport in SiGe/Si Two-Dimensional Hole Gases

1996 ◽  
pp. 449-452 ◽  
Author(s):  
G. Brunthaler ◽  
G. Bauer ◽  
G. Braithwaite ◽  
N. L. Mattey ◽  
P. Phillips ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Two Dimensional ◽  
Hot Carrier

Temperature dependency and carrier transport mechanisms of Ti/p-type InP Schottky rectifiers

2010 ◽  
Vol 504 (1) ◽  
pp. 146-150 ◽  
Author(s):  
V. Janardhanam ◽  
Hoon-Ki Lee ◽  
Kyu-Hwan Shim ◽  
Hyo-Bong Hong ◽  
Soo-Hyung Lee ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Temperature Dependency ◽  
Transport Mechanisms ◽  
Schottky Rectifiers ◽  
P Type

scholarly journals Manipulation of hot carrier cooling dynamics in two-dimensional Dion–Jacobson hybrid perovskites via Rashba band splitting

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Jun Yin ◽  
Rounak Naphade ◽  
Partha Maity ◽  
Luis Gutiérrez-Arzaluz ◽  
Dhaifallah Almalawi ◽  
...  
Keyword(s):  
Transient Absorption ◽  
Phonon Scattering ◽  
Transient Absorption Spectroscopy ◽  
Band Model ◽  
Two Dimensional ◽  
Spintronic Devices ◽  
Hot Carrier ◽  
Band Splitting ◽  
Perovskite Materials ◽  
Spin Polarized

AbstractHot-carrier cooling processes of perovskite materials are typically described by a single parabolic band model that includes the effects of carrier-phonon scattering, hot phonon bottleneck, and Auger heating. However, little is known (if anything) about the cooling processes in which the spin-degenerate parabolic band splits into two spin-polarized bands, i.e., the Rashba band splitting effect. Here, we investigated the hot-carrier cooling processes for two slightly different compositions of two-dimensional Dion–Jacobson hybrid perovskites, namely, (3AMP)PbI4 and (4AMP)PbI4 (3AMP = 3-(aminomethyl)piperidinium; 4AMP = 4-(aminomethyl)piperidinium), using a combination of ultrafast transient absorption spectroscopy and first-principles calculations. In (4AMP)PbI4, upon Rashba band splitting, the spin-dependent scattering of hot electrons is responsible for accelerating hot-carrier cooling at longer delays. Importantly, the hot-carrier cooling of (4AMP)PbI4 can be extended by manipulating the spin state of the hot carriers. Our findings suggest a new approach for prolonging hot-carrier cooling in hybrid perovskites, which is conducive to further improving the performance of hot-carrier-based optoelectronic and spintronic devices.

Terahertz-wave generation using graphene

2012 ◽  
Vol 1437 ◽  
Author(s):  
Taiichi Otsuji ◽  
Stephane Boubanga Tombet ◽  
Akira Satou ◽  
Maxim Ryzhii ◽  
Victor Ryzhii
Keyword(s):  
Terahertz Wave ◽  
Wave Generation ◽  
Nonequilibrium Carrier ◽  
Terahertz Range ◽  
Two Dimensional ◽  
Carrier Relaxation ◽  
Dynamic Conductivity ◽  
Electrically Pumped ◽  
Terahertz Lasers ◽  
Recombination Dynamics

ABSTRACTIn this paper recent advances in terahertz-wave generation in graphene are reviewed. First, fundamental basis of the optoelectronic properties of graphene is introduced. Second, nonequilibrium carrier relaxation and recombination dynamics in optically or electrically pumped graphene is described to introduce a possibility of negative dynamic conductivity in a wide terahertz range. Third, recent theoretical advances toward the creation of current-injection graphene terahertz lasers are described. Fourth, unique terahertz dynamics of the two-dimensional plasmons in graphene are described. Finally, the advantages of graphene materials and devices for terahertz-wave generation are summarized.

Carrier transport mechanisms in a-Si:H,F/a-Si,Ge:H,F superlattices

1987 ◽  
Vol 97-98 ◽  
pp. 939-942 ◽  
Author(s):  
J.P. Conde ◽  
S. Aljishi ◽  
D.S. Shen ◽  
M. Angell ◽  
S. Wagner
Keyword(s):  
Carrier Transport ◽  
Transport Mechanisms

Coupled-Langevin-equation analysis of hot-carrier transport in semiconductors

1992 ◽  
Vol 45 (4) ◽  
pp. 1903-1906 ◽  
Author(s):  
Tilmann Kuhn ◽  
Lino Reggiani ◽  
Luca Varani
Keyword(s):  
Langevin Equation ◽  
Carrier Transport ◽  
Hot Carrier ◽  
Equation Analysis
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