High-performance ion-implanted MES-FET on InP using enhanced barrier self-aligned Schottky gate
1989 ◽
Vol 36
(11)
◽
pp. 2610-2611
◽
1991 ◽
Vol 111
(1-4)
◽
pp. 475-478
◽
1987 ◽
Vol 34
(12)
◽
pp. 2610-2615
◽
1989 ◽
Vol 36
(9)
◽
pp. 1703-1710
◽
1982 ◽
Vol 3
(11)
◽
pp. 327-329
◽
1991 ◽
Vol 1
(7)
◽
pp. 167-169
◽