High-performance millimeter-wave ion-implanted GaAs MESFETs

1989 ◽  
Vol 10 (2) ◽  
pp. 95-97 ◽  
Author(s):  
G.W. Wang ◽  
M. Feng ◽  
C.L. Lau ◽  
C. Ito ◽  
T.R. Lepkowski
Keyword(s):  
Millimeter Wave ◽  
High Performance ◽  
Ion Implanted

scholarly journals A RF Redundant TSV Interconnection for High Resistance Si Interposer

Micromachines ◽  
2021 ◽  
Vol 12 (2) ◽  
pp. 169
Author(s):  
Mengcheng Wang ◽  
Shenglin Ma ◽  
Yufeng Jin ◽  
Wei Wang ◽  
Jing Chen ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
High Frequency ◽  
High Performance ◽  
Rapid Development ◽  
Coplanar Waveguide ◽  
Equivalent Circuit Model ◽  
High Resistivity ◽  
Performance Requirements ◽  
Wave Radar ◽  
Interconnect Design

Through Silicon Via (TSV) technology is capable meeting effective, compact, high density, high integration, and high-performance requirements. In high-frequency applications, with the rapid development of 5G and millimeter-wave radar, the TSV interposer will become a competitive choice for radio frequency system-in-package (RF SIP) substrates. This paper presents a redundant TSV interconnect design for high resistivity Si interposers for millimeter-wave applications. To verify its feasibility, a set of test structures capable of working at millimeter waves are designed, which are composed of three pieces of CPW (coplanar waveguide) lines connected by single TSV, dual redundant TSV, and quad redundant TSV interconnects. First, HFSS software is used for modeling and simulation, then, a modified equivalent circuit model is established to analysis the effect of the redundant TSVs on the high-frequency transmission performance to solidify the HFSS based simulation. At the same time, a failure simulation was carried out and results prove that redundant TSV can still work normally at 44 GHz frequency when failure occurs. Using the developed TSV process, the sample is then fabricated and tested. Using L-2L de-embedding method to extract S-parameters of the TSV interconnection. The insertion loss of dual and quad redundant TSVs are 0.19 dB and 0.46 dB at 40 GHz, respectively.

High-performance 38-GHz PHEMT power amplifier MMIC for commercial millimeter wave radio systems

1996 ◽  
Author(s):  
Weiqi Li ◽  
Gamal M. Hegazi ◽  
Timothy T. Lee ◽  
Fred Phelleps
Keyword(s):  
Millimeter Wave ◽  
Power Amplifier ◽  
High Performance ◽  
Wave Radio ◽  
Radio Systems

scholarly journals Microwave Liquid Crystal Technology

Crystals ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 355 ◽  
Author(s):  
Holger Maune ◽  
Matthias Jost ◽  
Roland Reese ◽  
Ersin Polat ◽  
Matthias Nickel ◽  
...  
Keyword(s):  
Liquid Crystal ◽  
Millimeter Wave ◽  
Antenna Arrays ◽  
High Performance ◽  
Beam Steering ◽  
Phase Shifters ◽  
Dielectric Waveguides ◽  
Microwave Components ◽  
Recent Developments ◽  
Rectangular Waveguides

Tunable Liquid Crystal (LC)-based microwave components are of increasing interest in academia and industry. Based on these components, numerous applications can be targeted such as tunable microwave filters and beam-steering antenna systems. With the commercialization of first LC-steered antennas for Ku-band e.g., by Kymeta and Alcan Systems, LC-based microwave components left early research stages behind. With the introduction of terrestrial 5G communications systems, moving to millimeter-wave communication, these systems can benefit from the unique properties of LC in terms of material quality. In this paper, we show recent developments in millimeter wave phase shifters for antenna arrays. The limits of classical high-performance metallic rectangular waveguides are clearly identified. A new implementation with dielectric waveguides is presented and compared to classic approaches.

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