scholarly journals Two-dimensional numerical simulation of Fermi-level pinning phenomena due to DX centers in AlGaAs/GaAs HEMTs

1989 ◽  
Vol 36 (10) ◽  
pp. 2307-2314 ◽  
Author(s):  
H. Mizuta ◽  
K. Yamaguchi ◽  
M. Yamane ◽  
T. Tanoue ◽  
S. Takahashi
Keyword(s):  
Numerical Simulation ◽  
Fermi Level ◽  
Two Dimensional ◽  
Dx Centers ◽  
Fermi Level Pinning

Anomalously persistent p-type behavior of WSe2 field-effect transistors by oxidized edge-induced Fermi-level pinning

2022 ◽  
Author(s):  
Tien Dat Ngo ◽  
Min Sup Choi ◽  
Myeongjin Lee ◽  
Fida Ali ◽  
Won Jong Yoo
Keyword(s):  
Fermi Level ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Two Dimensional ◽  
Edge Contact ◽  
Fermi Level Pinning ◽  
P Type

A technique to form the edge contact in two-dimensional (2D) based field-effect transistors (FETs) has been intensively studied for the purpose of achieving high mobility and also recently overcoming the...

Metal–2D multilayered semiconductor junctions: layer-number dependent Fermi-level pinning

2020 ◽  
Vol 8 (9) ◽  
pp. 3113-3119 ◽  
Author(s):  
Qian Wang ◽  
Yangfan Shao ◽  
Penglai Gong ◽  
Xingqiang Shi
Keyword(s):  
Fermi Level ◽  
Thickness Dependence ◽  
Available P ◽  
Two Dimensional ◽  
Layer Number ◽  
Fermi Level Pinning

Thickness-dependent performance of metal–two-dimensional semiconductor junctions in electronics/optoelectronics have attracted increasing attention but, currently, little knowledge about the micro-mechanism of this thickness dependence is available.

scholarly journals Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier

2016 ◽  
Vol 2 (4) ◽  
pp. e1600069 ◽  
Author(s):  
Yuanyue Liu ◽  
Paul Stradins ◽  
Su-Huai Wei
Keyword(s):  
Fermi Level ◽  
Schottky Barrier ◽  
Van Der Waals ◽  
Two Dimensional ◽  
Fermi Level Pinning ◽  
Fundamental Properties ◽  
2D Semiconductors ◽  
Semiconductor Junction ◽  
Device Applications ◽  
Gap States

Two-dimensional (2D) semiconductors have shown great potential for electronic and optoelectronic applications. However, their development is limited by a large Schottky barrier (SB) at the metal-semiconductor junction (MSJ), which is difficult to tune by using conventional metals because of the effect of strong Fermi level pinning (FLP). We show that this problem can be overcome by using 2D metals, which are bounded with 2D semiconductors through van der Waals (vdW) interactions. This success relies on a weak FLP at the vdW MSJ, which is attributed to the suppression of metal-induced gap states. Consequently, the SB becomes tunable and can vanish with proper 2D metals (for example, H-NbS2). This work not only offers new insights into the fundamental properties of heterojunctions but also uncovers the great potential of 2D metals for device applications.

Tuning Schottky barriers for monolayer GaSe FETs by exploiting a weak Fermi level pinning effect

2018 ◽  
Vol 20 (33) ◽  
pp. 21732-21738 ◽  
Author(s):  
Nanshu Liu ◽  
Si Zhou ◽  
Nan Gao ◽  
Jijun Zhao
Keyword(s):  
Fermi Level ◽  
Schottky Barriers ◽  
Great Promise ◽  
Gallium Selenide ◽  
Two Dimensional ◽  
Fermi Level Pinning ◽  
Pinning Effect

Monolayer gallium selenide (GaSe), an emerging two-dimensional semiconductor, holds great promise for electronics and optoelectronics.

scholarly journals Dipole-induced Ohmic contacts between monolayer Janus MoSSe and bulk metals

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Ning Zhao ◽  
Udo Schwingenschlögl
Keyword(s):  
First Principles ◽  
Ohmic Contacts ◽  
Electrode Materials ◽  
Electronic Device ◽  
Two Dimensional ◽  
First Principles Calculations ◽  
Fermi Level Pinning ◽  
Common Electrode ◽  
Two Sides ◽  
Metallic Electrodes

AbstractUtilizing a two-dimensional material in an electronic device as channel layer inevitably involves the formation of contacts with metallic electrodes. As these contacts can dramatically affect the behavior of the device, we study the electronic properties of monolayer Janus MoSSe in contact with different metallic electrodes by first-principles calculations, focusing on the differences in the characteristics of contacts with the two sides of MoSSe. In particular, we demonstrate that the Fermi level pinning is different for the two sides of MoSSe, with the magnitude resembling that of MoS2 or MoSe2, while both sides can form Ohmic contacts with common electrode materials without any further adaptation, which is an outstanding advantage over MoS2 and MoSe2.

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