Implementation of nonlocal model for impact-ionization current in bipolar circuit simulation and application to SiGe HBT design optimization

1995 ◽  
Vol 42 (6) ◽  
pp. 1166-1173 ◽  
Author(s):  
G.-B. Hong ◽  
J.G. Fossum
Keyword(s):  
Design Optimization ◽  
Impact Ionization ◽  
Circuit Simulation ◽  
Nonlocal Model ◽  
Sige Hbt ◽  
Ionization Current ◽  
Bipolar Circuit

An Accurate Impact Ionization Current Model for LDD SOI MOSFETs

1995 ◽  
Author(s):  
S. Pidin ◽  
N. Terao ◽  
T. Matsumoto ◽  
Y. Inoue ◽  
M. Koyanagi
Keyword(s):  
Impact Ionization ◽  
Current Model ◽  
Ionization Current

Compact RF non-linear electro thermal model of SiGe HBT for the design of broadband ADC's

2012 ◽  
Vol 4 (6) ◽  
pp. 569-578
Author(s):  
Alaa Saleh ◽  
Abdel Kader El Rafei ◽  
Mountakha Dieng ◽  
Tibault Reveyrand ◽  
Raphael Sommet ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Linear Model ◽  
Thermal Model ◽  
High Speed ◽  
Circuit Simulation ◽  
Extraction Procedure ◽  
Low Frequency ◽  
Sige Hbt ◽  
S Parameter ◽  
Non Linear

The design of high speed integrated circuits heavily relies on circuit simulation and requires compact transistor models. This paper presents a non-linear electro-thermal model of SiGe heterojunction-bipolar transistor (HBT). The non-linear model presented in this paper uses a hybrid π topology and it is extracted using IV and S-parameter measurements. The thermal sub-circuit is extracted using low-frequency S-parameter measurements. The model extraction procedure is described in detail. It is applied here to the modeling of npn SiGe HBTs. The proposed non-linear electro-thermal model is expected to be used for the design of high-speed electronic functions such as broadband analog digital converters in which both electrical and thermal aspects are engaged. The main focus and contribution of this paper stands in the fact that the proposed non-linear model covers wideband-frequency range (up to 65 GHz).

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