Characteristics of impact-ionization current in the advanced self-aligned polysilicon-emitter bipolar transistor

1991 ◽  
Vol 38 (8) ◽  
pp. 1845-1851 ◽  
Author(s):  
T.M. Liu ◽  
T.-Y. Chiu ◽  
V.D. Archer ◽  
H.H. Kim
Keyword(s):  
Impact Ionization ◽  
Bipolar Transistor ◽  
Ionization Current ◽  
Polysilicon Emitter

A New Reverse Base Current (RBC) of the Bipolar Transistor Induced by Impact Ionization

1989 ◽  
Vol 28 (Part 2, No. 12) ◽  
pp. L2150-L2152 ◽  
Author(s):  
Koji Sakui ◽  
Takehiro Hasegawa ◽  
Tsuneaki Fuse ◽  
Toshiki Seshita ◽  
Seiichi Aritome ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Bipolar Transistor ◽  
Base Current

Integration of a double-polysilicon emitter-base self-aligned bipolar transistor into a 0.5- mu m BiCMOS technology for fast 4-Mb SRAM's

1993 ◽  
Vol 40 (6) ◽  
pp. 1121-1128 ◽  
Author(s):  
J.D. Hayden ◽  
J.D. Burnett ◽  
A.K. Perera ◽  
T.C. Mele ◽  
F.W. Walczyk ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Bicmos Technology ◽  
Polysilicon Emitter

An Accurate Impact Ionization Current Model for LDD SOI MOSFETs

1995 ◽  
Author(s):  
S. Pidin ◽  
N. Terao ◽  
T. Matsumoto ◽  
Y. Inoue ◽  
M. Koyanagi
Keyword(s):  
Impact Ionization ◽  
Current Model ◽  
Ionization Current

High-speed polysilicon emitter—base bipolar transistor

1986 ◽  
Vol 7 (12) ◽  
pp. 658-660 ◽  
Author(s):  
H.K. Park ◽  
K. Boyer ◽  
C. Clawson ◽  
G. Eiden ◽  
A. Tang ◽  
...  
Keyword(s):  
High Speed ◽  
Bipolar Transistor ◽  
Polysilicon Emitter

IVB-2 a novel polysilicon-collector bipolar transistor for the study of polysilicon-emitter interface physics

1986 ◽  
Vol 33 (11) ◽  
pp. 1853-1854
Author(s):  
E. Crabbe ◽  
J. del Alamo ◽  
R.F.W. Pease ◽  
R.M. Swanson
Keyword(s):  
Bipolar Transistor ◽  
Polysilicon Emitter

Influence of impact-ionization-induced base current reversal on bipolar transistor parameters

1995 ◽  
Vol 42 (9) ◽  
pp. 1636-1646 ◽  
Author(s):  
L. Vendrame ◽  
E. Zabotto ◽  
A. Dal Fabbro ◽  
A. Zanini ◽  
G. Verzellesi ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Bipolar Transistor ◽  
Base Current ◽  
Current Reversal

DC extraction of the base and emitter resistances in polysilicon-emitter npn BJTs

1996 ◽  
Vol 74 (S1) ◽  
pp. 172-176 ◽  
Author(s):  
V. Van ◽  
M. J. Deen ◽  
J. Kendall ◽  
D. S. Malhi ◽  
S. Voinigescu ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Bipolar Junction Transistors ◽  
New Techniques ◽  
Current Range ◽  
Base Current ◽  
Ionization Yield ◽  
Ionization Method ◽  
Ionization Region ◽  
Polysilicon Emitter ◽  
The Impact

Five DC techniques of extracting the base and emitter resistances of polysilicon-emitter npn bipolar junction transistors (BJTs) are presented and compared. The five techniques include three previously published techniques and two new techniques, constant base current and IB–IE plane fitting. Application of the five methods to a 0.8 × 16 μm2 npn BJT shows that all but the method of impact ionization yield comparable Rc and Rbb values at high currents. The impact ionization method, which extracts Rc and Rbb in the impact ionization region and at low base currents, yields markedly different Rc and Rbb values, indicating that the values of the parasitic resistances depend on the current range over which the extraction is performed. Thus the choice of which method is best to use depends on the current range over which Rc and Rbb are to be measured, and the validity of the assumptions used in the method when applied to the device.

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