Hetero-emitter-like characteristics of phosphorus doped polysilicon emitter transistors. Part I: band structure in the polysilicon emitter obtained from electrical measurements

1995 ◽  
Vol 42 (3) ◽  
pp. 419-426 ◽  
Author(s):  
M. Kondo ◽  
T. Kobayashi ◽  
Y. Tamaki
Keyword(s):  
Band Structure ◽  
Electrical Measurements ◽  
Polysilicon Emitter ◽  
Phosphorus Doped

Investigation of the energy band structure of orthorhombic BaSi2 by optical and electrical measurements and theoretical calculations

2002 ◽  
Vol 81 (6) ◽  
pp. 1032-1034 ◽  
Author(s):  
Tomoyuki Nakamura ◽  
Takashi Suemasu ◽  
Ken-ichiro Takakura ◽  
Fumio Hasegawa ◽  
Akihiro Wakahara ◽  
...  
Keyword(s):  
Band Structure ◽  
Energy Band ◽  
Theoretical Calculations ◽  
Energy Band Structure ◽  
Electrical Measurements

Phosphorus-Doped SnTe-Type Needle-like Crystals: Band Structure Modifications and Electronic Properties

2017 ◽  
Vol 121 (33) ◽  
pp. 18263-18273 ◽  
Author(s):  
Prashant K Sarswat ◽  
Sayan Sarkar ◽  
Gaosong Yi ◽  
Michael L Free
Keyword(s):  
Band Structure ◽  
Electronic Properties ◽  
Phosphorus Doped

A 64-GHz f/sub T/ and 3.6-V BV/sub CEO/ Si bipolar transistor using in situ phosphorus-doped and large-grained polysilicon emitter contacts

1993 ◽  
Vol 40 (8) ◽  
pp. 1563-1565 ◽  
Author(s):  
M. Nanba ◽  
T. Uchino ◽  
M. Kondo ◽  
T. Nakamura ◽  
T. Kobayashi ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Polysilicon Emitter ◽  
Phosphorus Doped

scholarly journals Electron transport and band structure in phosphorus-doped polycrystalline silicon films

2009 ◽  
Vol 105 (3) ◽  
pp. 033715 ◽  
Author(s):  
David L. Young ◽  
Howard M. Branz ◽  
Fude Liu ◽  
Robert Reedy ◽  
Bobby To ◽  
...  
Keyword(s):  
Electron Transport ◽  
Band Structure ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Polycrystalline Silicon Films ◽  
Phosphorus Doped

Effect of annealing on polysilicon emitter transistors

1989 ◽  
Vol 67 (4) ◽  
pp. 179-183 ◽  
Author(s):  
E. P. Keyes ◽  
N. G. Tarr
Keyword(s):  
Furnace Annealing ◽  
Polysilicon Emitters ◽  
Polysilicon Emitter ◽  
Phosphorus Doped ◽  
Tolerable Level

The effect of 900 °C furnace annealing on transistors with in situ phosphorus-doped polysilicon emitters has been investigated. For devices with chemically grown interfacial oxides, annealing is essential to give acceptable emitter resistance and emitter Gummel numbers. For devices lacking an intentionally grown interfacial oxide, annealing is necessary to reduce the emitter resistance to a tolerable level, but it simultaneously lowers the emitter Gummel number.

Effect of rapid epitaxy in in situ phosphorus-doped polysilicon emitter on current-gain of bipolar transistors

1996 ◽  
Vol 43 (8) ◽  
pp. 1281-1285 ◽  
Author(s):  
T. Shiba ◽  
M. Kondo ◽  
T. Uchino ◽  
H. Murakoshi ◽  
Y. Tamaki
Keyword(s):  
Bipolar Transistors ◽  
Current Gain ◽  
Polysilicon Emitter ◽  
Phosphorus Doped
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