Coupled-quantum-well field-effect resonant tunneling transistor for multi-valued logic/memory applications

C.H. Mikkelson; A.C. Seabaugh; E.A. Beam; J.H. Luscombe; G.A. Frazier

doi:10.1109/16.277388

Coupled-quantum-well field-effect resonant tunneling transistor for multi-valued logic/memory applications

IEEE Transactions on Electron Devices ◽

10.1109/16.277388 ◽

1994 ◽

Vol 41 (2) ◽

pp. 132-137 ◽

Cited By ~ 10

Author(s):

C.H. Mikkelson ◽

A.C. Seabaugh ◽

E.A. Beam ◽

J.H. Luscombe ◽

G.A. Frazier

Keyword(s):

Quantum Well ◽

Field Effect ◽

Resonant Tunneling ◽

Well Field ◽

Memory Applications ◽

Coupled Quantum Well

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dc current‐voltage characteristics of a double‐quantum‐well field‐effect resonant tunneling transistor

Applied Physics Letters ◽

10.1063/1.107052 ◽

1992 ◽

Vol 60 (18) ◽

pp. 2273-2275 ◽

Cited By ~ 3

Author(s):

J. G. Chen ◽

C. H. Yang ◽

R. A. Wilson ◽

C. E. C. Wood

Keyword(s):

Quantum Well ◽

Field Effect ◽

Resonant Tunneling ◽

Double Quantum ◽

Double Quantum Well ◽

Current Voltage ◽

Well Field ◽

Current Voltage Characteristics ◽

Dc Current

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Nonmonotonic Electron Mobility in Asymmetrically Doped V-shaped Coupled Quantum Well Field-Effect Transistor Structure

Computers and Devices for Communication - Lecture Notes in Networks and Systems ◽

10.1007/978-981-15-8366-7_59 ◽

2021 ◽

pp. 401-406

Author(s):

A. K. Panda ◽

Devika Jena ◽

Sangeeta K. Palo ◽

Trinath Sahu

Keyword(s):

Quantum Well ◽

Electron Mobility ◽

Field Effect ◽

Field Effect Transistor ◽

Transistor Structure ◽

Well Field ◽

Effect Transistor ◽

Coupled Quantum Well

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A semi-analytical model for III-V semiconductor quantum well field effect transistors

2014 International Conference on Electrical Engineering and Information & Communication Technology ◽

10.1109/iceeict.2014.6919039 ◽

2014 ◽

Author(s):

M. S. Rahman ◽

M. S. Islam ◽

A. Haque

Keyword(s):

Quantum Well ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Well Field ◽

Semiconductor Quantum Well

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Advanced high-K gate dielectric for high-performance short-channel In0.7Ga0.3As quantum well field effect transistors on silicon substrate for low power logic applications

2009 IEEE International Electron Devices Meeting (IEDM) ◽

10.1109/iedm.2009.5424361 ◽

2009 ◽

Cited By ~ 48

Author(s):

M. Radosavljevic ◽

B. Chu-Kung ◽

S. Corcoran ◽

G. Dewey ◽

M. K. Hudait ◽

...

Keyword(s):

Quantum Well ◽

Silicon Substrate ◽

Field Effect ◽

High Performance ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Short Channel ◽

High K ◽

Well Field ◽

Low Power Logic

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Electrostatics improvement in 3-D tri-gate over ultra-thin body planar InGaAs quantum well field effect transistors with high-K gate dielectric and scaled gate-to-drain/gate-to-source separation

2011 International Electron Devices Meeting ◽

10.1109/iedm.2011.6131661 ◽

2011 ◽

Cited By ~ 95

Author(s):

M. Radosavljevic ◽

G. Dewey ◽

D. Basu ◽

J. Boardman ◽

B. Chu-Kung ◽

...

Keyword(s):

Quantum Well ◽

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Source Separation ◽

Thin Body ◽

High K ◽

Well Field ◽

Ingaas Quantum Well ◽

High K Gate Dielectric

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A In0.53Ga0.47As-In0.52Al0.48As single quantum well field-effect transistor

IEEE Electron Device Letters ◽

10.1109/edl.1985.26260 ◽

1985 ◽

Vol 6 (12) ◽

pp. 642-644 ◽

Cited By ~ 2

Author(s):

K.S. Seo ◽

P.K. Bhattacharya ◽

Y. Nashimoto

Keyword(s):

Quantum Well ◽

Field Effect ◽

Field Effect Transistor ◽

Single Quantum ◽

Single Quantum Well ◽

Well Field ◽

Effect Transistor

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Refine treatment of plasmon mediated photoconductivity resonances in a grid-gated double-quantum-well field-effect transistor

The Fifth International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves (IEEE Cat. No.04EX828) ◽

10.1109/msmw.2004.1345963 ◽

2004 ◽

Cited By ~ 1

Author(s):

V.V. Popov ◽

T.V. Teperik ◽

Yu.N. Zayko ◽

S.J. Allen ◽

N.J.M. Horing

Keyword(s):

Quantum Well ◽

Field Effect ◽

Field Effect Transistor ◽

Double Quantum ◽

Double Quantum Well ◽

Well Field ◽

Effect Transistor

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InGaAs resonant tunneling transistors using a coupled-quantum-well base with strained AlAs tunnel barriers

IEEE Transactions on Electron Devices ◽

10.1109/16.310099 ◽

1994 ◽

Vol 41 (9) ◽

pp. 1498-1503 ◽

Cited By ~ 9

Author(s):

S. Koch ◽

T. Waho ◽

T. Mizutani

Keyword(s):

Quantum Well ◽

Resonant Tunneling ◽

Tunnel Barriers ◽

Coupled Quantum Well

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III-V Quantum Well Field Effect Transistors on Silicon for Future High Performance and Low Power Logic Applications

2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) ◽

10.1109/csics.2011.6062431 ◽

2011 ◽

Cited By ~ 2

Author(s):

G. Dewey ◽

M. Radosavljevic ◽

N. Mukherjee

Keyword(s):

Quantum Well ◽

Low Power ◽

Field Effect ◽

High Performance ◽

Field Effect Transistors ◽

Well Field ◽

Low Power Logic

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Absorption of terahertz radiation by plasmon modes in a grid-gated double-quantum-well field-effect transistor

Journal of Applied Physics ◽

10.1063/1.1599051 ◽

2003 ◽

Vol 94 (5) ◽

pp. 3556-3562 ◽

Cited By ~ 96

Author(s):

V. V. Popov ◽

O. V. Polischuk ◽

T. V. Teperik ◽

X. G. Peralta ◽

S. J. Allen ◽

...

Keyword(s):

Quantum Well ◽

Terahertz Radiation ◽

Field Effect ◽

Field Effect Transistor ◽

Double Quantum ◽

Double Quantum Well ◽

Well Field ◽

Effect Transistor ◽

Plasmon Modes

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