InGaAs resonant tunneling transistors using a coupled-quantum-well base with strained AlAs tunnel barriers

1994 ◽  
Vol 41 (9) ◽  
pp. 1498-1503 ◽  
Author(s):  
S. Koch ◽  
T. Waho ◽  
T. Mizutani
1994 ◽  
Vol 41 (2) ◽  
pp. 132-137 ◽  
Author(s):  
C.H. Mikkelson ◽  
A.C. Seabaugh ◽  
E.A. Beam ◽  
J.H. Luscombe ◽  
G.A. Frazier

1995 ◽  
Vol 34 (Part 1, No. 2B) ◽  
pp. 1232-1235
Author(s):  
Hideaki Taniyama ◽  
Masaaki Tomizawa ◽  
Akira Yoshii

1991 ◽  
Vol 30 (Part 2, No. 12A) ◽  
pp. L2018-L2020 ◽  
Author(s):  
Takao Waho ◽  
Koichi Maezawa ◽  
Takashi Mizutani

1986 ◽  
Vol 1 (2) ◽  
pp. 337-342 ◽  
Author(s):  
M.A. Reed ◽  
J.W. Lee ◽  
R.K. Aldert ◽  
A.E. Wetsel

We present the first known systematic mapping of quantum well and tunnel barrier thicknesses in a resonant tunneling structure by transport measurements. The technique derives a 1 Å averaged resolution for quantum well and barrier thicknesses, independently for the quantum well and adjacent tunnel barriers. Contour maps of the structure reveal an asymmetric shallow ring growth structure for one of the epilayers. Current-voltage characteristics and temperature dependence of the resonant tunneling structures will also be discussed.


1996 ◽  
Vol 361-362 ◽  
pp. 142-145 ◽  
Author(s):  
Yuzo Ohno ◽  
Hiroyuki Sakaki

1994 ◽  
Vol 75 (10) ◽  
pp. 5079-5086 ◽  
Author(s):  
H. Taniyama ◽  
M. Tomizawa ◽  
A. Yoshii

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-457-C5-461
Author(s):  
C. J. SUMMERS ◽  
K. F. BRENNAN ◽  
A. TORABI ◽  
H. M. HARRIS ◽  
J. COMAS

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